Charge-noise spectroscopy of Si/SiGe quantum dots via dynamically-decoupled exchange oscillations

Electron spins in silicon quantum dots are promising qubits due to their long coherence times, scalable fabrication, and potential for all-electrical control. However, charge noise in the host semiconductor presents a major obstacle to achieving high-fidelity single- and two-qubit gates in these devices. In this work, we measure the charge-noise spectrum of a Si/SiGe singlet-triplet qubit over nearly 12 decades in frequency using a combination of methods, including dynamically-decoupled exchange oscillations with up to 512 pi pulses during the qubit evolution. The charge noise is colored across the entire frequency range of our measurements, although the spectral exponent changes with frequency. Moreover, the charge-noise spectrum inferred from conductance measurements of a proximal sensor quantum dot agrees with that inferred from coherent oscillations of the singlet-triplet qubit, suggesting that simple transport measurements can accurately characterize the charge noise over a wide frequency range in Si/SiGe quantum dots. Charge noise is a major limitation to achieving high-fidelity quantum gate performance with semiconductor qubits. Here the authors report the results of charge noise spectroscopy for electron spin qubits in silicon quantum dots, spanning nearly twelve decades in frequency.

Automated summary

The authors report the results of charge noise spectroscopy for electron spin qubits in silicon quantum dots, spanning nearly twelve decades in frequency. The charge noise can be accurately characterized using simple transport measurements over a wide frequency range in Si/SiGe quantum dots.