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Photoluminescence of Poly(methyl methacrylate)/[(Zn,Cd)S:Mn,Cu,Eu] Composites

期刊

TECHNICAL PHYSICS LETTERS
卷 47, 期 11, 页码 818-822

出版社

MAIK NAUKA/INTERPERIODICA/SPRINGER
DOI: 10.1134/S1063785021080253

关键词

A(II)B(VI) semiconductors; doping; semiconductor structures; poly(methyl methacrylate); composites; photoluminescence

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Nanodimensional structures based on zinc and cadmium sulfides doped with Mn, Cu, and Eu ions have been synthesized using a polymerizable medium. The synthesized compositions exhibit a broadband photoluminescence related to recombination processes on the defect levels of semiconductor structures, as well as narrow PL bands due to electron transitions between energy levels of Eu3+ ions. The photoluminescence is excited by interband transitions, electron transitions to levels of structural defects, intrinsic absorption, and energy transfer to Eu3+ ion levels.
Nanodimensional structures based on zinc and cadmium sulfides and doped with Mn, Cu, and Eu ions have been synthesized by the method of appearing reactants in a polymerizable medium. The broadband PL of synthesized compositions is related to recombination processes on the defect levels of semiconductor structures. Narrow PL bands appear due to electron transitions between energy levels of Eu3+ ions. The PL is excited due the interband transitions and electron transitions to levels of structural defects, as well as due to intrinsic absorption and energy transfer to Eu3+ ion levels.

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