期刊
INORGANIC MATERIALS
卷 52, 期 9, 页码 902-908出版社
MAIK NAUKA/INTERPERIODICA/SPRINGER
DOI: 10.1134/S0020168516090181
关键词
vanadium oxides; simpsonite; high pressures; X-ray powder diffraction; crystal structure; IR spectroscopy; Raman spectrum; electrical conductivity
资金
- Russian Foundation for Basic Research [16-03-00171 a]
Reaction between alpha-V2O5 and NaN3 has been studied at pressures from 5.0 to 6.0 GPa and temperatures from 600 to 800A degrees C using Toroid high-pressure chambers. A new oxide, V3.047O7 (VO2.297), isostructural with simpsonite, Al4Ta3O13(OH), has been detected in samples with the initial composition 0.2NaN(3) center dot V2O5 after high-temperature, high-pressure processing at p = 5.0 GPa and t = 800A degrees C for 2 min. The crystal structure of the oxide has been refined by the Rietveld method using X-ray powder diffraction data: a = 7.35136(2) , c = 4.51462(2) , V = 211.294(1) (3), Z = 2, sp. gr. P3. Each vanadium atom in this structure is coordinated by six oxygens in the form of a [VO6] octahedron. The synthesized oxide is a second compound with the simpsonite structure. We have measured the infrared transmission and Raman spectra of V3.047O7. Electrical measurements have demonstrated that the material is a semiconductor.
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