4.6 Article

Research on the thermal failure mechanism of an opposed-contact gallium arsenide photoconductive semiconductor switch in avalanche mode

期刊

出版社

IOP Publishing Ltd
DOI: 10.1088/1361-6463/ac54d4

关键词

GaAs PCSS; thermal process; switching transient; multiple avalanche domains; 2D evolution

资金

  1. National Natural Science Foundation of China [51707162, 52177156]
  2. Foundation of State Key Laboratory of Intense Pulsed Radiation Simulation and Effect [SKLIPR2004]

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This study investigates the switching mechanism and thermal process of a gallium arsenide (GaAs) photoconductive semiconductor switch (PCSS). A numerical simulation of the two-dimensional structure is performed using temperature-dependent physical parameters. It is found that the PCSS switches on due to the formation and evolution of multiple powerful avalanche domains triggered by a low-energy laser pulse. The simulation results indicate that the 2D filamentary current flows along the drift path of ionizing centres inside the avalanche domains, leading to filamentary erosion after continuous operation of the PCSS.
The switching mechanism and the thermal process of a gallium arsenide (GaAs) photoconductive semiconductor switch (PCSS) with an opposed-contact is investigated by numerical simulation of the two-dimensional (2D) structure using temperature-dependent physical parameters of the carriers in GaAs. Triggered by a low-energy laser pulse, the PCSS switches on due to the formation and evolution of multiple powerful avalanche domains. The 2D evolving characteristics of the avalanche domains on the two sides of photogenerated plasma during the switching transient are comparatively analysed. It is found that the ionizing centre of each domain moves with the drift of accumulated electrons inside the domain. Meanwhile, the evolution of avalanche domains causes an obvious thermal effect along the drift path of ionizing centres during the switch-on stage of PCSS. Then, the temperature keeps increasing at the edge of the anode and cathode although the switching current starts dropping after the conduction of PCSS, and finally peaks at similar to 491 K and similar to 541 K, respectively. The simulation results indicate that the 2D filamentary current flows along the drift path of ionizing centres inside the avalanche domains, which finally leads to filamentary erosion after continuous operation of the PCSS. On the basis of numerical simulation, an experiment with opposed-contact GaAs PCSS with 2.5 mm gap at the bias field of similar to 90 kV cm(-1) is performed. The thermal erosion is found to initially accumulate at the edge of the electrodes and then spreads along the current channel into the GaAs substrate, which is in accordance with the simulation results and analysis.

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