Low power Ti-doped NbO2-based selector device with high selectivity and low OFF current

Approaching the high intrinsic electrical resistivity of NbO2 in epitaxially grown films

(2020) Julian Stoever et al.   APPLIED PHYSICS LETTERS

An ovonic threshold switching selector based on Se-rich GeSe chalcogenide

(2019) Bing Song et al.   APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

Vacancy-modulated self-rectifying characteristics of NiOx/Al2O3-based nanoscale ReRAM devices

(2019) Ji Hwan Lee et al.   JOURNAL OF ALLOYS AND COMPOUNDS

Dual-Layer Selector With Excellent Performance for Cross-Point Memory Applications

(2018) Qi Lin et al.   IEEE ELECTRON DEVICE LETTERS

Switching Voltage and Time Statistics of Filamentary Conductive Paths in HfO2-Based ReRAM Devices

(2018) A. Rodriguez-Fernandez et al.   IEEE ELECTRON DEVICE LETTERS

Research on Temperature Effect in Insulator–Metal Transition Selector Based on NbOx Thin Films

(2018) Ao Chen et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Simple Binary Ovonic Threshold Switching Material SiTe and Its Excellent Selector Performance for High-Density Memory Array Application

(2017) Yunmo Koo et al.   IEEE ELECTRON DEVICE LETTERS

Exploration of selector characteristic based on electron tunneling for RRAM array application

(2017) Bing Song et al.   IEICE Electronics Express

Chaotic dynamics in nanoscale NbO2 Mott memristors for analogue computing

(2017) Suhas Kumar et al.   NATURE

Highly Non-linear and Reliable Amorphous Silicon Based Back-to-Back Schottky Diode as Selector Device for Large Scale RRAM Arrays

(2017) Cheng-Chih Hsieh et al.   ECS Journal of Solid State Science and Technology

Off-state current reduction in NbO2-based selector device by using TiO2 tunneling barrier as an oxygen scavenger

(2016) Minkook Kang et al.   APPLIED PHYSICS LETTERS

Comprehensive scaling study of NbO2 insulator-metal-transition selector for cross point array application

(2016) Euijun Cha et al.   APPLIED PHYSICS LETTERS

Multidimensional Simulation of Threshold Switching in NbO2Based on an Electric Field Triggered Thermal Runaway Model

(2016) Carsten Funck et al.   Advanced Electronic Materials

Voltage-induced insulator-to-metal transition of hydrogen-treated NbO2thin films

(2015) Minkook Kang et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Band gap of epitaxial in-plane-dimerized single-phase NbO2 films

(2014) Agham B. Posadas et al.   APPLIED PHYSICS LETTERS

Reduced Threshold Current in NbO2 Selector by Engineering Device Structure

(2014) Xinjun Liu et al.   IEEE ELECTRON DEVICE LETTERS

Thermodynamic Properties of Niobium Oxides

(2010) K. T. Jacob et al.   JOURNAL OF CHEMICAL AND ENGINEERING DATA