Back-End-of-Line Compatible Fully Depleted CMOS Inverters Employing Ge p-FETs and α-InGaZnO n-FETs

出版年份 2021 全文链接

标题

作者

关键词

出版物

Volume 42, Issue 10, Pages 1488-1491

出版商

Institute of Electrical and Electronics Engineers (IEEE)

发表日期

2021-09-01

DOI

10.1109/led.2021.3109343

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