期刊
IEEE TRANSACTIONS ON MEDICAL IMAGING
卷 35, 期 12, 页码 2558-2567出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TMI.2016.2586053
关键词
Q-spoiling; GaN HEMT; depletion mode; receive coils
类别
资金
- Stanford Graduate Fellowship
- National Science Foundation
- NIH [R01EB008108, P01CA15999, R01EB019241]
- GE Healthcare
Q-spoiling is the process of decoupling an MRI receive coil to protect the equipment and patient. Conventionally, Q-spoiling is performed using a PIN diode switch that draws significant current. In this work, a Q-spoiling technique using a depletion-mode Gallium Nitride HEMT device was developed for coil detuning at both 1.5 T and 3 T MRI. The circuits with conventional PIN diode Q-spoiling and the GaN HEMT device were implemented on surface coils. SNR was measured and compared for all surfaces coils. At both 1.5 T and 3 T, comparable SNR was achieved for all coils with the proposed technique and conventional Q-spoiling. The GaN HEMT device has significantly reduced the required power for Q-spoiling. The GaN HEMT device also provides useful safety features by detuning the coil when unpowered.
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