4.7 Article

Depletion-Mode GaN HEMT Q-Spoil Switches for MRI Coils

期刊

IEEE TRANSACTIONS ON MEDICAL IMAGING
卷 35, 期 12, 页码 2558-2567

出版社

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TMI.2016.2586053

关键词

Q-spoiling; GaN HEMT; depletion mode; receive coils

资金

  1. Stanford Graduate Fellowship
  2. National Science Foundation
  3. NIH [R01EB008108, P01CA15999, R01EB019241]
  4. GE Healthcare

向作者/读者索取更多资源

Q-spoiling is the process of decoupling an MRI receive coil to protect the equipment and patient. Conventionally, Q-spoiling is performed using a PIN diode switch that draws significant current. In this work, a Q-spoiling technique using a depletion-mode Gallium Nitride HEMT device was developed for coil detuning at both 1.5 T and 3 T MRI. The circuits with conventional PIN diode Q-spoiling and the GaN HEMT device were implemented on surface coils. SNR was measured and compared for all surfaces coils. At both 1.5 T and 3 T, comparable SNR was achieved for all coils with the proposed technique and conventional Q-spoiling. The GaN HEMT device has significantly reduced the required power for Q-spoiling. The GaN HEMT device also provides useful safety features by detuning the coil when unpowered.

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