期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 63, 期 6, 页码 2340-2345出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2016.2553136
关键词
GaN high electron mobility transistors (HEMTs); p-diamond back-barrier (BB); p-diamond cap layer; power electronics
资金
- ONR PECASE program
- ARPA-E SWITCHES program
This work explores the use of p-diamond back-barriers (BBs) and cap layers to enhance the performance of GaN-based high electron mobility transistors (HEMTs). Diamond can offer a heavily doped p-type layer, which is complementary to GaN electronics. Self-consistent electrothermal simulations reveal that the use of p-diamond BBs and cap layers can increase the breakdown voltage of GaN-based HEMTs by fourfold, at the same time that they enhance the 2-D-electron-gas confinement and reduce short channel effects. These results highlight that p-diamond layers can improve the performance of GaN HEMTs for high-power and high-frequency applications beyond the thermal improvements pursued until now.
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