Article
Engineering, Electrical & Electronic
Antoine Chanuel, Yveline Gobil, Chuan Lun Hsu, Matthew Charles, Marianne Coig, Jerome Biscarrat, Francois Aussenac, Nicolas Defrance, Christophe Gaquiere, Fred Gaillard, Erwan Morvan
Summary: This study introduces a new contact technology for high-frequency transistors in the Ka-band, showing advantages such as low contact resistance and high breakdown voltage, and explores a new breakdown mechanism. Experimental results demonstrate that silicon implantation has a certain influence on improving breakdown voltage.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2022)
Article
Engineering, Electrical & Electronic
Nadim Chowdhury, Qingyun Xie, Tomas Palacios
Summary: This study demonstrates W-gated p-channel GaN/AlGaN heterojunction field effect transistors grown on GaN-on-Si wafers using MOCVD. The use of W as the gate metal induces higher turn-on voltage and lower gate leakage current compared to the commonly used Mo. Annealing in N-2 ambient at 500 degrees C is introduced to reduce channel resistance. The results show that W-gated p-FETs exhibit high current amplification and low resistance in different transistor sizes.
IEEE ELECTRON DEVICE LETTERS
(2022)
Article
Engineering, Electrical & Electronic
Yan Cheng, Yat Hon Ng, Zheyang Zheng, Kevin J. Chen
Summary: Enhancement-mode (E-mode) submicron 0.45-μm p-GaN gate HEMTs on 200-mm high-resistivity-Si (HRS) substrates have been demonstrated with high uniformity and high overall combined performance for RF applications. The p-GaN gate HEMT exhibits positive threshold voltage, high transconductance, and high saturation current density. It also shows low OFF state leakage current, high breakdown voltage, and high cut-off frequencies. Additionally, it achieves high power output and efficiency at 5 GHz.
IEEE ELECTRON DEVICE LETTERS
(2023)
Article
Engineering, Electrical & Electronic
Maliha Noshin, Rohith Soman, Srabanti Chowdhury
Summary: Devices made from ultrawide bandgap materials are being widely investigated for high-power and RF electronics. Nitrogen-polar GaN channel HEMTs exhibit better performance compared to their metal-polar counterparts. In this work, the first experimental demonstration of N-polar all-AlGaN HEMT devices with different Al compositions (20% and 30%) in the channel is reported. These devices showed high drive current, low leakage current, large on/off ratio, and high breakdown voltage without field plate structures.
IEEE ELECTRON DEVICE LETTERS
(2023)
Article
Engineering, Electrical & Electronic
Keitaro Ikejiri, Yuichi Hiroyama, Kenji Kasahara, Chihiro Hirooka, Takenori Osada, Mitsuhiro Tanaka, Tomoyuki Takada, Takashi Egawa
Summary: Technologies for mass production of AlGaN/AlN/GaN HEMT structures on 200 mm diameter silicon substrates have been developed using a large-scale metal-organic chemical vapor deposition system. The inclusion of an AlN spacer layer between the AlGaN and GaN layers can lead to lower on-state resistance for power devices. The AlN spacer layer successfully fabricated in this study helps to suppress the alloy disorder scattering effect, resulting in high two-dimensional-electron-gas mobility in HEMT structures.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
(2021)
Article
Engineering, Electrical & Electronic
Tao Zhang, Ruohan Li, Juan Lu, Yanni Zhang, Yueguang Lv, Xiaoling Duan, Shengrui Xu, Jincheng Zhang, Yue Hao
Summary: The letter presents high-performance AlGaN/GaN SBDs with a balance between forward and reverse characteristics. Lateral GaN SBDs with low turn-on voltage and low reverse current were obtained using optimized wet etching technique and low work-function anode. Additionally, a high breakdown voltage and power figure-of-merit were achieved for the fabricated GaN SBD with specific spatial distance and optimized wet etching technique, showing great potential for next-generation power electronics.
IEEE ELECTRON DEVICE LETTERS
(2021)
Article
Engineering, Electrical & Electronic
Yan Wang, Qingzhi Wu, Shuman Mao, Ruimin Xu, Bo Yan, Yuehang Xu
Summary: This study proposes a fabrication method for a bendable GaN HEMT with state-of-the-art output power in the microwave band, grown on SiC substrates and transferred using a copper film. The fabricated devices exhibited a saturation output power of 2.65 W and maximum PAE of 51% at 3 GHz, indicating potential for high-power flexible RF electronics.
IEEE ELECTRON DEVICE LETTERS
(2021)
Article
Engineering, Electrical & Electronic
Jungho Ahn, Dahee Kim, Kyung-Ho Park, Geonwook Yoo, Junseok Heo
Summary: The study presents an ultrahigh sensitive hydrogen sensor based on Pt-decorated graphene gate AlGaN/GaN MIS-HEMT, which operates at room temperature. The sensor demonstrates remarkably high sensitivity even at very low concentrations of hydrogen (<1 ppm).
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2021)
Article
Materials Science, Multidisciplinary
James Spencer Lundh, Patrick Waltereit, Stefan Mueller, Lutz Kirste, Heiko Czap, Marko J. Tadjer, Karl D. Hobart, Travis J. Anderson, Vladimir Odnoblyudov
Summary: In this study, the electrical and thermal performance of lateral AlGaN/GaN HEMTs and MISFETs fabricated with 11 μm thick GaN buffer layers on 200 mm diameter QST substrates were investigated. Raman spectroscopy was used to determine the biaxial residual stress in the GaN buffer, while electrical characterization included various measures such as DC and pulsed output characteristics and Hall mobility. The thermal performance of the AlGaN/GaN MISFET was assessed through thermoreflectance thermal imaging.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
(2023)
Article
Engineering, Electrical & Electronic
Yiding Lin, Bongkwon Son, Kwang Hong Lee, Jurgen Michel, Chuan Seng Tan
Summary: This study demonstrates a vertical p-i-n Ge photodiode with remarkably low dark current on a high-quality GOI substrate. By reducing threading dislocation density in Ge and improving device fabrication, the photodiodes show high responsivity and specific detectivity at specific wavelengths and voltages. These findings pave the way for advanced imaging and sensing applications in PICs at near-infrared and short-wave infrared wavelengths.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2021)
Article
Engineering, Electrical & Electronic
Sheng Zhang, Ke Wei, Yichuan Zhang, Xiaojuan Chen, Sen Huang, Guoguo Liu, Yingkui Zheng, Tingting Yuan, Xinhua Wang, Yankui Li, Jiebin Niu, Xinyu Liu
Summary: PEALD SiN gate dielectric is used in AIGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMT), resulting in devices with small threshold voltage hysteresis, decreased leakage current, and good threshold voltage stability. The increased mobility of 2-DEG and suppressed current collapse lead to high power density and power-added efficiency in continuous-wave mode at 30 GHz.
IEEE ELECTRON DEVICE LETTERS
(2021)
Article
Physics, Applied
Shiro Ozaki, Junya Yaita, Atsushi Yamada, Yusuke Kumazaki, Yuichi Minoura, Toshihiro Ohki, Naoya Okamoto, Norikazu Nakamura, Junji Kotani
Summary: This letter demonstrates the successful high-power RF operation of AlGaN/GaN HEMTs on AlN substrate at X-band, showcasing a high output power density. The results suggest the potential of GaN HEMTs on AlN substrate as next-generation high-power RF devices.
APPLIED PHYSICS EXPRESS
(2021)
Article
Engineering, Electrical & Electronic
Ravi Ranjan, Nitesh Kashyap, Ashish Raman
Summary: The discovery of wideband gap semiconductor materials has revolutionized power electronics, with the utilization of dual-recessed gate technique showing improved device performance and linearity characteristics. The proposed DRG-MIS-HEMT device exhibits promising results with a recessed gate width of 28 nm, making it a potential candidate for RF applications in the future.
INTERNATIONAL JOURNAL OF NUMERICAL MODELLING-ELECTRONIC NETWORKS DEVICES AND FIELDS
(2022)
Article
Engineering, Electrical & Electronic
Baoxing Duan, Junchao Ma, Luoyun Yang, Yulong Wang, Yintang Yang
Summary: This article proposes a novel vertical trench gate AlGaN/GaN metal-insulator-semiconductor field-effect transistor (MISFET) with semi-insulating polycrystalline silicon (SIPOS) field plates for the first time. The presence of SIPOS field plates and deep trench structure leads to a more uniform electric field distribution and increased breakdown voltage (BV) in the OFF-state. In the ON-state, a high concentration electron region is formed, resulting in a significant reduction in the specific ON-resistance (R-ON,R-sp) of the device. The proposed SIPOS VT-AlGaN/GaN MISFET achieves a better compromise between BV and R-ON,R-sp.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2023)
Article
Engineering, Electrical & Electronic
Sheng Zhang, Xinyu Liu, Ke Wei, Sen Huang, Xiaojuan Chen, Yichuan Zhang, Yingkui Zheng, Guoguo Liu, Tingting Yuan, Xinhua Wang, Haibo Yin, Yao Yao, Jiebin Niu
Summary: The article demonstrates a Ka-band AlGaN/GaN MIS-HEMT with SiN gate dielectric grown by PEALD, which significantly reduces gate reverse leakage current, improves breakdown voltage, and delivers high output power density and peak power-added efficiency.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2021)
Article
Engineering, Electrical & Electronic
Wei-Min Wu, Ming-Dou Ker, Shih-Hung Chen, Arturo Sibaja-Hernandez, Sachin Yadav, Uthayasankaran Peralagu, Hao Yu, AliReza Alian, Vamsi Putcha, Bertrand Parvais, Nadine Collaert, Guido Groeseneken
Summary: Gallium nitride (GaN) technologies play an important role in commercial advanced RF systems, but face challenges in reliability due to electrostatic discharge (ESD). A mis-correlation between standard-defined human body model (HBM) ESD robustness and commonly used transmission line pulse (TLP) failure current was observed in GaN high electron mobility transistors (HEMTs). A discharge model is proposed to explain the mechanism, and simulations confirm that the mis-correlation is due to 2-dimensional electron gas (2DEG) resistance modulation in response to HBM ESD transient voltage waveforms.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2022)
Article
Engineering, Electrical & Electronic
A. N. Tallarico, M. Millesimo, B. Bakeroot, M. Borga, N. Posthuma, S. Decoutere, E. Sangiorgi, C. Fiegna
Summary: This study reports for the first time the TCAD modeling of dynamic threshold voltage shift in Schottky-type p-GaN gate HEMTs under fast sweeping characterization. The experimental characterization and TCAD simulations demonstrate that the dynamic V_TH hysteresis is mainly influenced by time-dependent hole charging/discharging processes in the floating p-GaN layer.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2022)
Article
Physics, Applied
K. Mukherjee, C. De Santi, S. You, K. Geens, M. Borga, S. Decoutere, B. Bakeroot, P. Diehle, F. Altmann, G. Meneghesso, E. Zanoni, M. Meneghini
Summary: This paper investigates the effect of planar etching treatment and trench formation on the performance of GaN-based MOS stacks. It is found that blanket etching the GaN surface does not degrade the robustness of the deposited dielectric layer. However, the addition of the trench etch improves reproducibility but results in a decrease in breakdown performance. Capacitance-voltage measurements reveal that as-grown planar capacitors have the lowest trapping, while trench capacitors have higher interface and bulk trapping. High resolution scanning transmission electron microscopy confirms an increased roughness at the GaN surface after blanket etching, correlated with higher density of interface traps.
APPLIED PHYSICS LETTERS
(2022)
Article
Physics, Applied
Anurag Vohra, Karen Geens, Ming Zhao, Olga Syshchyk, Herwig Hahn, Dirk Fahle, Benoit Bakeroot, Dirk Wellekens, Benjamin Vanhove, Robert Langer, Stefaan Decoutere
Summary: In this study, the epitaxial growth of a GaN buffer structure with a hard breakdown voltage of >1200V on 200mm engineered poly-AlN substrates was successfully demonstrated. This achievement is significant for high voltage GaN-based power applications, such as electric cars.
APPLIED PHYSICS LETTERS
(2022)
Article
Engineering, Electrical & Electronic
N. Modolo, C. De Santi, G. Baratella, A. Bettini, M. Borga, N. Posthuma, B. Bakeroot, S. You, S. Decoutere, A. Bevilacqua, A. Neviani, G. Meneghesso, E. Zanoni, M. Meneghini
Summary: This article proposes a methodology for modeling the dynamic characteristics of GaN power HEMTs, considering the realistic trapping/detrapping kinetics described by stretched exponentials. The analysis accurately describes stretched-exponential transients and extracts the related parameters, and reproduces the stretched exponential behavior using multiple RC networks.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2022)
Article
Engineering, Electrical & Electronic
Pavan Vudumula, Thibault Cosnier, Olga Syshchyk, Benoit Bakeroot, Stefaan Decoutere
Summary: This paper presents the TCAD-based design and verification of a 200 V GaN-on-SOI integrated circuits platform, which includes depletion-mode MIS-HEMTs and Gated-Edge-Termination Schottky barrier diodes (GET-SBDs). The platform also consists of low-voltage analog/logic devices and passive components to support the GaN ICs. Device simulations were validated through measurements of low voltage test structures, resulting in calibration of various parameters for HEMT and GET-SBD structures.
SOLID-STATE ELECTRONICS
(2023)
Article
Engineering, Electrical & Electronic
M. Vandemaele, B. Kaczer, S. Tyaginov, J. Franco, E. Bury, A. Chasin, A. Makarov, G. Hellings, G. Groeseneken
Summary: We simulate the spatial profile of trapped charge in the forksheet FET wall under hot-carrier stress and find that the charge trapping occurs above and below the horizontal projection of the sheet. The charge profile is independent of the sheet width, and the trapping in the forksheet FET wall is significantly smaller than the trapping in the gate stack.
IEEE ELECTRON DEVICE LETTERS
(2023)
Article
Engineering, Electrical & Electronic
Shun-Wei Tang, Benoit Bakeroot, Zhen-Hong Huang, Szu-Chia Chen, Wei-Syuan Lin, Ting-Chun Lo, Matteo Borga, Dirk Wellekens, Niels Posthuma, Stefaan Decoutere, Tian-Li Wu
Summary: The gate current characteristics in AlGaN/GaN high electron mobility transistors (HEMTs) with a p-GaN gate were investigated to explain the threshold voltage shift. The intrinsic gate current conduction mechanisms were identified as thermionic emission (TE) in the AlGaN/GaN region at low bias range (2.5 V < V-G < 4 V) and trap-assisted tunneling (TAT) in the Schottky/p-GaN region at higher bias range (4 V < V-G < 7 V). The threshold voltage shift in the stress phase was found to be consistent with a trap level having an activation energy of E-A similar to 0.6 eV. A physical model considering TAT via hole transport was proposed to explain the negative V-TH shift.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2023)
Article
Engineering, Electrical & Electronic
Wei-Min Wu, Shih-Hung Chen, Chun-An Shih, Bertrand Parvais, Nadine Collaert, Ming-Dou Ker, Tian-Li Wu, Guido Groeseneken
Summary: Gallium nitride (GaN)-on-Si technologies for advanced RF applications have been drawing attention in the semiconductor industry, along with challenges in RF electrostatic discharge (ESD) reliability. Investigating both positive and negative ESD stress polarities is equally important. In this study, four scenarios of positive and negative human body model (HBM) stresses were conducted on GaN-on-Si (MIS-HEMTs) with gate-tied-to-source and gate-tied-to-drain configurations. It was found that the negative GS MIS-HEMT exhibited a failure mechanism different from the constant-power 2DEG failure mechanism in the typical positive GS (MIS-HEMT).
IEEE ELECTRON DEVICE LETTERS
(2023)
Article
Engineering, Electrical & Electronic
K. Kaczmarek, M. Garcia Bardon, Y. Xiang, N. Ronchi, L. -A. Ragnarsson, U. Celano, K. Banerjee, B. Kaczer, G. Groeseneken, J. Van Houdt
Summary: We investigate the origins of threshold voltage (V-TH) variability in planar ferroelectric FETs (FeFETs) by considering both process variations and source-drain channel percolation. By using a percolation-aware physics-based multidomain FeFET model, we are able to accurately capture the measured V-TH statistics across various channel dimensions in fabricated devices. Our findings suggest that the bimodal V-TH distribution observed in large devices can be explained by percolation, while the transition to a monomodal distribution in scaled devices is qualitatively reproduced by the overlapping Pelgrom-type and percolative variabilities in the model. Furthermore, we demonstrate that the percolation-related FeFET V-TH variability is minimized when the channel aspect ratio is equal to 1 in terms of device geometry.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2023)
Proceedings Paper
Engineering, Multidisciplinary
Michiel Vandemaele, Ben Kaczer, Erik Bury, Jacopo Franco, Adrian Chasin, Alexander Makarov, Hans Mertens, Geert Hellings, Guido Groeseneken
Summary: We present TCAD simulation studies on the hot-carrier reliability of nanowire (NW), nanosheet (NS), and forksheet (FS) FETs. The simulations involve solving the Boltzmann transport equation, calculating interface state generation and bulk defect charging, and evaluating the impact of generated/trapped charges on FET characteristics. We discuss the models used in hot-carrier simulation flows, anneal measurements, and validate the simulation models by comparing with NW FET measurements, providing insights for NS and FS FETs.
2023 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, IRPS
(2023)
Proceedings Paper
Engineering, Electrical & Electronic
S. Abhinay, W. -M. Wu, C. -A. Shih, S. -H. Chen, A. Sibaja-Hernandez, B. Parvais, U. Peralagu, A. Alian, T. -L. Wu, M. -D. Ker, G. Groeseneken, N. Collaert
Summary: This paper presents an extensive experimental study and simulations on the impact of different stress scenarios on the ESD robustness of GaN RF HEMTs. The study highlights the importance of different current discharge paths for each stress scenario and verifies the contribution of the on-state gate Schottky diode to the robustness of the HEMTs. Additionally, three types of HBM failure mechanisms are identified under different stress scenarios.
2022 INTERNATIONAL ELECTRON DEVICES MEETING, IEDM
(2022)
Proceedings Paper
Engineering, Multidisciplinary
Michiel Vandemaele, Ben Kaczer, Stanislav Tyaginov, Erik Bury, Adrian Chasin, Jacopo Franco, Alexander Makarov, Hans Mertens, Geert Hellings, Guido Groeseneken
Summary: Forksheet (FS) FETs are a new transistor architecture that utilizes vertically stacked nFET and pFET sheets with a dielectric wall, reducing p-to-n separation. Hot-carrier degradation (HCD) simulations show that both FS FETs and NS FETs can reduce HCD with increasing sheet width when considering interface state generation. Furthermore, an initial assessment suggests that the impact of oxide defect charging in the FS wall can be controlled under operating conditions.
2022 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS)
(2022)
Proceedings Paper
Engineering, Multidisciplinary
Ping-Yi Hsieh, Artemisia Tsiara, Barry O'Sullivan, Didit Yudistira, Marina Baryshnikova, Guido Groeseneken, Bernardette Kunert, Marianna Pantouvaki, Joris Van Campenhout, Ingrid De Wolf
Summary: This study reports for the first time a reliability study on degradation of InGaAs/GaAs nano-ridge p-i-n diodes monolithically integrated on Si by nano-ridge engineering (NRE). The results show that current crowding and Joule heating near the p-contact are responsible for the degradation in forward bias region, while the electrical stress-induced leakage current indicates the degradation of crystal quality in reverse bias region. The study also demonstrates that a sintering process can lower the p-contact resistance and improve electrical stability, and the high aspect-ratio of the trenches leads to effective threading dislocation trapping.
2022 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS)
(2022)
