4.7 Article

Integrated Silicon Directly Modulated Light Source Using p-Well in Standard CMOS Technology

期刊

IEEE SENSORS JOURNAL
卷 16, 期 16, 页码 6184-6191

出版社

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JSEN.2016.2582840

关键词

Silicon light emitting device; electro-optic modulation; semiconductor integrated optoelectronics

资金

  1. Natural Science Foundation of China [61540013]
  2. Department of Science and Technology of Sichuan Province [2016JY0217]
  3. Open Foundation of State Key Laboratory of Electronic Thin Films and Integrated Devices [KFJJ201508]
  4. Science and Technology on Analog Integrated Circuits Laboratory [9140C090112150C09042]

向作者/读者索取更多资源

This paper studies integrated silicon light emitter implemented in standard CMOS technologies. A new MOS-like structure utilizing deep p-well is presented, and compared with conventional planar p-n junction diode at visible wavelength and avalanching bias conditions. Prototype light emitter is fabricated in a 3-mu m standard CMOS technology, and its dc, phase shift, and direct modulation frequency response with nanowatt power level are characterized, with experimental results for a reverse-bias region showing light modulation with the simulated maximum modulation frequency around similar to 45 GHz being reported.

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