4.7 Article

Experimental Study and Device Design of NO, NO2, and NH3 Gas Detection for a Wide Dynamic and Large Temperature Range Using Pt/AlGaN/GaN HEMT

期刊

IEEE SENSORS JOURNAL
卷 16, 期 18, 页码 6828-6838

出版社

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JSEN.2016.2593050

关键词

AlGaN; GaN; HEMT; sensors; exhaust gas detection

资金

  1. Region of Lorraine
  2. Peugeot PSA Citroen as part of the OpenLab
  3. UMI GT-CNRS

向作者/读者索取更多资源

We report an AlGaN/GaN HEMT gas sensor designed to enable NO, NO2, and NH3 detection from 100 degrees C-400 degrees C over a large concentration range. Device modeling is performed to optimize several HEMT device parameters for sensing, and the experimental results show that the optimized sensor has improved performance compared with the previously reported HEMT sensors. The device shows significant no sensitivity for the first time in an HEMT device, with sensitivity up to 7% at 400 degrees C. In addition, high sensitivities of up to 17% are reported for NO2, and NH3 is detected at concentrations as low as 150 ppb.

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