Platinum silicide formation on selected semiconductors surfaces via thermal annealing and intercalation

In this work, platinum silicide formation on selected semiconductors surfaces: Si(1 0 0), Si(1 1 1), 4H-SiC(0 0 0 1) and graphene-4H-SiC(0 0 0 1), via thermal annealing and intercalation process are investigated. Growth morphology and thermal stability of formed silicides are studied using X-ray Photoelectron Spectroscopy (XPS) and Low Energy Electron Diffraction (LEED). Results of chemical composition and observed reconstructions corresponding to each substrate are discussed and compared. Despite graphene surface, formation of platinum silicide takes place already at room temperature. However to obtain characteristic Pt-Si structures additional processes are required. System annealing at various temperatures allows to observe the effects of platinum atoms diffusion and intercalation into the deeper substrate regions, which causes formation of different silicide structures and chemical composition. Presented results allow to determine the Si(1 0 0) and graphene-4H-SiC (0001) surfaces as the most proper for formation of stabile and well-ordered platinum silicide.

Automated summary

This study investigates the formation of platinum silicide on selected semiconductor surfaces through thermal annealing and intercalation process, analyzing growth morphology and thermal stability using XPS and LEED. The results suggest that Si(1 0 0) and graphene-4H-SiC(0001) surfaces are most suitable for stable and well-ordered platinum silicide formation.