Formation of Ohmic Contact With Low Contact Resistance on n-GeSn by Fermi Level Depinning Using Plasma Treatment

标题
Formation of Ohmic Contact With Low Contact Resistance on n-GeSn by Fermi Level Depinning Using Plasma Treatment
作者
关键词
-
出版物
IEEE ELECTRON DEVICE LETTERS
Volume 37, Issue 7, Pages 827-830
出版商
Institute of Electrical and Electronics Engineers (IEEE)
发表日期
2016-05-12
DOI
10.1109/led.2016.2566809

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