Impact of Random Variations on Cell Stability and Write-Ability of Low-Voltage SRAMs Using Monolayer and Bilayer Transition Metal Dichalcogenide (TMD) MOSFETs

标题
Impact of Random Variations on Cell Stability and Write-Ability of Low-Voltage SRAMs Using Monolayer and Bilayer Transition Metal Dichalcogenide (TMD) MOSFETs
作者
关键词
-
出版物
IEEE ELECTRON DEVICE LETTERS
Volume 37, Issue 7, Pages 928-931
出版商
Institute of Electrical and Electronics Engineers (IEEE)
发表日期
2016-05-10
DOI
10.1109/led.2016.2564998

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