Back-Channel Electrolyte-Gated a-IGZO Dual-Gate Thin-Film Transistor for Enhancement of pH Sensitivity Over Nernst Limit

出版年份 2016 全文链接

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作者

关键词

出版物

IEEE ELECTRON DEVICE LETTERS

Volume 37, Issue 4, Pages 500-503

出版商

Institute of Electrical and Electronics Engineers (IEEE)

发表日期

2016-03-02

DOI

10.1109/led.2016.2536359

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IEEE ELECTRON DEVICE LETTERS

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