期刊
ADVANCED FUNCTIONAL MATERIALS
卷 32, 期 21, 页码 -出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adfm.202112849
关键词
energy band engineering; Forster resonant energy transfer; hole transport layer; perovskite light-emitting diode
类别
资金
- Samsung Research Funding Center of Samsung Electronics [SRFC-MA1901-01]
Perovskite light-emitting diodes (PeLEDs) have attracted considerable attention due to their unique optoelectronic properties, but their performance is limited by low quantum efficiency and unbalanced charge injection. In this study, a novel co-hole transport layer (HTL) was introduced to improve the performance of CsPbBr3-based PeLEDs through efficient energy transfer and enhanced charge transfer. The proposed dual transfer strategy is expected to revolutionize PeLED research.
Perovskite light-emitting diodes (PeLEDs) have garnered considerable interest in recent years owing to their unique optoelectronic properties. However, the performance of PeLEDs is limited by their low quantum efficiency and unbalanced charge injection. In this study, to address these issues, a novel co-hole transport layer (HTL) of 4,4 '-bis(N-carbazolyl)-1,1 '-biphenyl (CBP) and poly(9-vinylcarbazole) (PVK) is introduced into PeLEDs. By optimizing the composition ratio of CBP and PVK, the performance of CsPbBr3-based PeLEDs is significantly improved via efficient Forster resonant energy transfer and an enhanced charge transfer owing to the well-aligned energy levels of the HTLs with the emission layers. The PeLED with an optimized composition ratio of the PVK0.5-CBP0.5 HTL exhibits the best device performance with a luminance of 31641 cd center dot m(-2), current efficiency of 39.2 cd center dot A(-1), and external quantum efficiency of 15.4%. Thus, the proposed strategy engineering dual transfer of energy and charge is expected to be revolutionary in the field of PeLED research.
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