4.7 Article

Atomistic modeling of interface strengthening in Al-Si eutectic alloys

期刊

ACTA MATERIALIA
卷 225, 期 -, 页码 -

出版社

PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.actamat.2021.117586

关键词

Al-Si alloy; Flake; Interface; Dislocation; Atomistic simulation

资金

  1. DOE, Office of Science, Office of Basic Energy Sciences [DE-SC0016808]
  2. Nebraska Research Initiative
  3. National Science Foundation [ECCS: 1542182]

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Al-Si cast alloys composed of alpha-Al and Al-Si eutectic often do not show significant improvement in mechanical properties due to Si flakes. The weak strengthening effect of Si flakes may be attributed to the low shear resistance and easy interaction of dislocations with Al-Si interfaces, leading to a decrease in the repulsive force on approaching dislocations and weakening the strengthening effect of Si flakes.
Al-Si cast alloys are usually composed of alpha-Al and Al-Si eutectic. Si flakes and Al matrix generally hold cube-on-cube orientation relationship with the primary interface (111)Al|| (111)Si. Extensive experimental studies demonstrated that Si flakes cannot significantly improve mechanical properties of Al-Si cast alloys. We hypothesize that the weak strengthening effect associated with Si flakes might be attributed to thermomechanical properties of Al-Si interfaces besides their morphologies. To characterize Al-Si interfaces with a large lattice mismatch (> 30%), we proposed the quasi-coincident site lattice (Q-CSL) as reference lattice, and demonstrated that the Q-CSL Al-Si coherent interface has three characteristic coherent structures, one stable and low energy structure and two metastable and high energy structures. The translation vectors for the same type of coherent Q-CSL structures are consistent with three displacement shift complete (DSC) vectors. The two metastable structures can be obtained by shifting the low energy structure with three partial DSC vectors. Semi-coherent interface is composed of the low energy Q-CSL patches and three sets of interface misfit dislocations with Burgers vectors same as the DSC vectors. Atomistic simulations revealed that Al-Si interface exhibits low shear resistance. Ideal shear strength of the Q-CSL coherent interface is 110 MPa and semi-coherent interface is 20 MPa. The low shear resistance is attributed to the glide of interface misfit dislocations. Al-Si interface also exhibits low formation and migration energies of point defects. Owing to low shear strength and low formation and migration energies of point defects, interface sliding or shear readily happen under mechanical loading or during dislocation-interface interactions. Lattice dislocations can cross slip onto or climb along Al-Si interfaces. These reactions decrease the number of accumulated dislocation loops around Si flakes and promote nucleation and emission of lattice dislocations from Al-Si interfaces to matrix, consequently reduce the repulsive force on approaching dislocations and weaken Si flakes strengthening effect. In situ tension and compression tests in a scanning electron microscope reveal relatively weak strengthening effect due to Si flakes, consistent with the computed dislocation interaction with interfaces and shear behavior of interfaces. (c) 2021 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

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