4.8 Article

Step-Edge Epitaxy for Borophene Growth on Insulators

期刊

ACS NANO
卷 15, 期 11, 页码 18347-18353

出版社

AMER CHEMICAL SOC
DOI: 10.1021/acsnano.1c07589

关键词

borophene; growth; 2D materials; hexagonal boron nitride; lateral epitaxy

资金

  1. Department of Energy, BES [DE-SC0012547]
  2. Welch Foundation [C-1590]
  3. U.S. Department of Energy Office of Science User Facility [DE-AC02-05CH11231]

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Borophene, a monatomic layer of boron atoms, has versatile properties but faces challenges in growth and characterization on metal substrates. A strategy utilizing step-edges on an h-BN substrate has been devised to enable boron epitaxial assembly and reduce the nucleation barrier, making borophene more accessible for testing or application on insulating substrates.
Borophene-a monatomic layer of boron atoms-stands out among two-dimensional (2D) materials, with its versatile properties tantalizing for physics exploration and next-generation devices. Yet its phases are all synthesized on and stay bound to metal substrates, hampering both characterization and use. Borophene growth on an inert insulator would allow postsynthesis exfoliation, but the weak adhesion to such a substrate results in a high 2D nucleation barrier, preventing clean borophene growth. This challenge can be circumvented in a strategy devised and demonstrated here with ab initio calculations. Naturally present 1D-defects, the step-edges on an h-BN substrate surface, enable boron epitaxial assembly, reduce the nucleation dimensionality, and lower the barrier by an order of magnitude (to 1.1 eV or less), yielding a v(1/9) phase. Weak borophene adhesion to the insulator makes it readily accessible for comprehensive property tests or transfer into the device setting.

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