MoS2 Homojunctions Transistors Enabled by Dimension Tailoring Strategy

2D semiconductors present tunable property with the physical dimension. Herein, an efficient strategy to modulate the band structure of ultrathin channel by dimension tailoring of the 2D materials is reported. In order to verify the practicability of this strategy, bulk-MoS2/MoS2 nanoribbon (NR) homojunctions are constructed with a rectification ratio approaching up to 10(4) and an ideality factor of 1.77 which readily enable the fabrication of MoS2-based metal-semiconductor field-effect transistors, and the bulk-MoS2 and the MoS2 NR serve as gate and channel, respectively. The fabricated devices exhibit robust performance, such as high saturation current of 46 mu A center dot mu m(-1) and high on-off ratio over 5 x 10(5) at room temperature. The output current presents a high value of 140 mu A center dot mu m(-1) at 77 K, then decreases with temperature. Moreover, the fabricated inverter provides a voltage gain of 15.4 and a near-ideal noise margin of 83% of supply voltage. This strategy indicates an alternative way to construct transistors based on the derivative of the same 2D material.

Automated summary

The efficient strategy of modulating the band structure of ultrathin channels by adjusting the dimension of 2D materials is reported. The fabricated devices exhibit robust performance with high saturation current and on-off ratio, and the strategy provides a voltage gain and noise margin suitable for transistor construction based on the same 2D material derivative.