Large-Area Tellurium/Germanium Heterojunction Grown by Molecular Beam Epitaxy for High-Performance Self-Powered Photodetector

As an attractive elemental semiconductor material, p-type tellurium (Te) with a narrow bandgap provides high carrier mobility, strong light-matter interactions in a wide spectral range, and good chemical stability, which enlightens the potential in optoelectronic devices. However, the applications are impeded by weak carrier separation and vague potential in scaling-up. In this work, the integration of Te and conventional semiconductor germanium (Ge) is designed. Through molecular beam epitaxy (MBE) method, large-area and uniform Te films with high crystallinity are directly deposited on the Ge substrates. The difference in work function between Te and Ge layer leads to a built-in electric field, which can effectively enhance the carrier separation. As a result, a self-powered splendid photovoltaic performance is observed in the MBE grown Te/Ge vertical heterojunction with current on/off ratio over 10(3), responsivity (R) 523 mA W-1, and specific detectivity (D*) 9.50 x 10(10) cm Hz(1/2) W-1 when illuminated by near-infrared light (980 nm, 2.15 mu W cm(-2)). Furthermore, excellent stability and high response speed of the ultrathin heterostructure offer a significant application value for multipurpose photoelectric devices.

Automated summary

The integration of tellurium (Te) and germanium (Ge) through molecular beam epitaxy (MBE) method led to the formation of a Te/Ge vertical heterojunction. The difference in work function between Te and Ge layer resulted in a built-in electric field that enhanced carrier separation, leading to excellent self-powered photovoltaic performance.