4.8 Article

Field-free spin-orbit torque-induced switching of perpendicular magnetization in a ferrimagnetic layer with a vertical composition gradient

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NATURE COMMUNICATIONS
卷 12, 期 1, 页码 -

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NATURE PORTFOLIO
DOI: 10.1038/s41467-021-24854-7

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资金

  1. U.S. National Science Foundation, Division of Electrical, Communications and Cyber Systems [NSF ECCS-1853879]
  2. National Natural Science Foundation of China [61971024, 51901008]
  3. International Mobility Project [B16001]
  4. National Key Technology Program of China [2017ZX01032101]
  5. National Science Foundation Materials Research Science and Engineering Center at Northwestern University [NSF DMR-1720319]
  6. SHyNE Resource (NSF) [ECCS-1542205]
  7. IIN
  8. Northwestern's MRSEC program [NSF DMR-1720139]
  9. China Scholarship Council [201906020022]
  10. COST Action [CA17123]

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This study demonstrates bias-field-free switching of perpendicular ferrimagnets through the use of vertical composition gradient, which induces intrinsic SOTs and gradient-driven DMI to break in-plane symmetry during the switching process. The research provides a novel strategy for designing efficient and compact SOT devices for perpendicular ferrimagnetic materials.
Current-induced spin-orbit torques (SOTs) are of interest for fast and energy-efficient manipulation of magnetic order in spintronic devices. To be deterministic, however, switching of perpendicularly magnetized materials by SOT requires a mechanism for in-plane symmetry breaking. Existing methods to do so involve the application of an in-plane bias magnetic field, or incorporation of in-plane structural asymmetry in the device, both of which can be difficult to implement in practical applications. Here, we report bias-field-free SOT switching in a single perpendicular CoTb layer with an engineered vertical composition gradient. The vertical structural inversion asymmetry induces strong intrinsic SOTs and a gradient-driven Dzyaloshinskii-Moriya interaction (g-DMI), which breaks the in-plane symmetry during the switching process. Micromagnetic simulations are in agreement with experimental results, and elucidate the role of g-DMI in the deterministic switching processes. This bias-field-free switching scheme for perpendicular ferrimagnets with g-DMI provides a strategy for efficient and compact SOT device design. Switching of ferrimagnets by current-induced spin-orbit torque is promising for spintronics, due to their high-speed dynamics and small macroscopic magnetization. Switching of perpendicularly magnetized materials, however, requires a bias field for symmetry breaking. Here, Zheng et al demonstrate field-free current-induced switching of perpendicular ferrimagnets, using a compositional gradient-driven Dzyaloshinskii-Moriya interaction.

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