Insights into secondary ion formation during dynamic SIMS analysis: Evidence from sputtering of laboratory synthesized uranium compounds with a high-energy O- primary beam on a NanoSIMS 50L

We investigate the sputtering and ionization process that takes place during secondary ion mass spectrometry (SIMS) analysis in order to develop a better understanding of the underlying controls on elemental and molecular oxide secondary ion yields. Using data from a suite of uranium compounds that were sputtered with an Oprimary beam on a NanoSIMS 50L, our goal is to understand whether a compound's intrinsic properties, or processes operating at the sputtering site, exert the greatest influence over the relative abundances of uranium elemental and molecular oxide secondary ions observed during an analysis. While the observed 238U/238U16O and 238U/238U16O2 of the various compounds exhibit considerable overlap, there are relationships between the weighted mean 238U/238U16O and 238U/238U16O2 ratios for the various compounds and their enthalpies of formation. This reinforces the existing theory that the nature of the material being sputtered can influence relative ion yields (e.g. the SIMS matrix effect), but we also document significant evidence for the influence of processes operating at the sputtering site as a major factor. The existence of a strong relationship between the relative uranium molecular oxide production rate and the mass fractionation regimes taking place within an analysis, as well as the existence of sudden shifts in molecular oxide production rates taking place within an analysis, provide further evidence for the importance of processes related to the sputtering and ionization dynamics as exerting the most control over observed ion yields. Evaluation of our data within the context of existing models for secondary ion production during SIMS analysis highlights the need for additional models that consider the competing influences of a sample's chemical and/or structural form, reactions taking place at the sputtering site, as well as the ionization and ion extraction dynamics of the various elemental and molecular oxide species.

Automated summary

The study on the sputtering and ionization process during SIMS analysis reveals that both the intrinsic properties of the compound and processes at the sputtering site influence the observed uranium elemental and molecular oxide secondary ion yields. The findings suggest that the material being sputtered and processes at the sputtering site play crucial roles in determining ion yields, emphasizing the need for additional models to consider the competing influences of a sample's chemical and/or structural form, reactions at the sputtering site, as well as ionization and ion extraction dynamics.