Modulation Doping: A Strategy for 2D Materials Electronics

It remains a remarkable challenge to develop practical techniques for controllable and nondestructive doping in two-dimensional (2D) materials for their use in electronics and optoelectronics. Here, we propose a modulation doping strategy, wherein the perfect n-/p-type channel layer is achieved by accepting/donating electrons from/to the defects inside an adjacent encapsulation layer. We demonstrate this strategy in the heterostructures of BN/graphene, BN/MoS2, where the previously believed useless deep defects, such as the nitrogen vacancy in BN, can provide free carriers to the graphene and MoS2. The carrier density is further modulated by engineering the surroundings of the encapsulation layer. Moreover, the defects and carriers are naturally separated in space, eliminating the effects of Coulomb impurity scattering and thus allowing high mobility in the 2D limit. This doping strategy provides a highly viable route to tune 2D channel materials without inducing any structural damage, paving the way for high-performance 2D nanoelectronic devices.

Automated summary

The research proposes a modulation doping strategy where perfect n-/p-type channel layers are achieved by accepting/donating electrons from/to defects in an adjacent encapsulation layer. By modulating the carrier density through engineering the surroundings of the encapsulation layer, high mobility is achieved in 2D materials.