Family of low dimensional materials with ternary elements Ta2NixSey: Growth strategy for Ta2NiSe5 and Ta2NiSe7

In the ternary Ta-Ni-Se materials group, the conditions for selectively synthesizing Ta2NiSe5 and Ta2NiSe7 that exhibit a low-dimensional layered structure (due to van der Waals bonding between layers) were studied. Control of both the stoichiometric ratio of selenium and synthesis temperature facilitated the selective growth of high-quality Ta2NiSe5 and Ta2NiSe7 crystals. The synthesized low-dimensional materials could be exfoliated in a layered form, with the Ta2NiSe5 and Ta2NiSe7 layers having semiconductor and metallic electrical characteristics, respectively, as verified through the change in electrical resistance with temperature. The synthesized materials are expected to expand the repertoire of semiconducting and conducting building blocks for use in various low-dimensional devices. (C) 2021 Elsevier B.V. All rights reserved.

Automated summary

By controlling the stoichiometric ratio of selenium and synthesis temperature, selective growth of high-quality Ta2NiSe5 and Ta2NiSe7 crystals with low-dimensional layered structure was achieved, exhibiting semiconductor and metallic electrical characteristics respectively. These synthesized materials are expected to broaden the range of semiconductor and conducting building blocks for various low-dimensional devices.