Article
Engineering, Electrical & Electronic
Vishal Narula, Mohit Agarwal
Summary: This paper presents an analytical, detailed two-dimensional potential profile model for a newly proposed rectangular core-shell-based double-gate junctionless metal oxide semiconductor (RCS-DGJLMOS). The model is compared to conventional n-type double-gate junctionless MOS (DGJLMOS), showing significant depletion in RCS-DGJLMOS due to the presence of oppositely doped core, consequently improving device performance. The analytical results are validated through Technology Computer Aided Design (TCAD) software simulation data.
IETE JOURNAL OF RESEARCH
(2022)
Article
Chemistry, Physical
Ajay
Summary: This article investigates the resistance and reliability issues of the Conventional Double Gate Metal-Oxide-Semiconductor Field-Effect Transistor (Conv. JL DG MOSFET) and proposes a new architecture called CSC JL DG MOSFET, which offers low leakage current and high doping concentration. The study also includes the first electrostatic discharge (ESD) reliability investigation for any JL MOSFET and CSC JL DG MOSFET.
Article
Engineering, Electrical & Electronic
Vanita Mehta, Sandeep Kumar Arya, Rajiv Sharma
Summary: The proposed core-shell gate all-around junctionless field-effect transistor (CS GAA JLFET) showed improved performance parameters through optimization of core doping and adjustment of channel length. The study demonstrated better control over carriers in the GAA configuration and significant enhancement in performance parameters with the advantage of the core-shell architecture.
IETE JOURNAL OF RESEARCH
(2021)
Article
Engineering, Electrical & Electronic
Lijun Xu, Guitai Wu, Pei Li, Tiedong Cheng
Summary: This paper presents a model for opposite doping core-shell channel (ODCSC) surrounding-gate (SG) junctionless (JL) MOSFET. The model estimates the threshold voltage and drain-induced barrier lowering (DIBL) effect by solving Poisson's equation under cylindrical coordinates. It considers various parameters such as the radius of the core channel, core channel doping, shell channel doping, gate length, radius of the total channel, and gate and drain biases. The model shows good agreement with simulation results and emphasizes the importance of core channel radius and doping as adjustment parameters.
MICROELECTRONICS JOURNAL
(2023)
Article
Chemistry, Physical
Prashant Kumar, Munish Vashishath, Neeraj Gupta, Rashmi Gupta
Summary: This paper investigates the impact of low-k/high-k dielectric on the performance of Double Gate Junction less (DG-JL) MOSFET. The study presents an analytical model for the threshold voltage and explores the effect of high-k on various performance parameters. Results show that high-k oxide performs better than other materials, and DG-JLFET with HfO2 exhibits excellent mitigation of Short Channel Effects (SCEs) and suitability for ultra-low power applications.
Article
Chemistry, Physical
Sandeep Kumar, Arun Kumar Chatterjee, Rishikesh Pandey
Summary: The study compared the performance of conventional and recessed double-gate junctionless FETs, finding that the recessed structure can further improve device performance. Within the appropriate work function window, both junctionless devices exhibit good transconductance and subthreshold characteristics.
Article
Engineering, Electrical & Electronic
Mohammad Bavir, Abdollah Abbasi, Ali Asghar Orouji
Summary: This study investigated the position of electrons and holes in the ON and OFF states of double-gate junctionless transistors, and proposed three structures to create an electron-filled region that reduced drain leakage current and improved various performance parameters.
JOURNAL OF ELECTRONIC MATERIALS
(2021)
Article
Computer Science, Hardware & Architecture
Gargi Jana, Dipanjan Sen, Papiya Debnath, Manash Chanda
Summary: This paper investigates the performance of the Dual Cavity Junction-less Double gate MOSFET-based biosensor and demonstrates its advantages in terms of current sensitivity and power consumption through simulation. This provides a new approach for the development of cost-efficient and simpler drug and biomolecule screening tools.
COMPUTERS & ELECTRICAL ENGINEERING
(2022)
Article
Engineering, Electrical & Electronic
Sorin Cristoloveanu, Gerard Ghibaudo
Summary: The performance of regular junctionless (JL) MOSFETs is significantly improved by the core-shell architecture, which consists of an undoped shell surrounding a heavily doped core. This architecture enables normally-off operation, high charge, excellent mobility, and very high current drive. It effectively suppresses the weaknesses of a classical JL transistor (negative threshold voltage, poor mobility, random dopant fluctuations (RDF)) while retaining its unique features (no junctions, simple processing).
SOLID-STATE ELECTRONICS
(2023)
Article
Polymer Science
You Yuan, Jingyu Lin, Xinhua Wang, Jun Qian, Peiyuan Zuo, Qixin Zhuang
Summary: This study introduces a core-double-shell-structured iron(II,III) oxide@barium titanate@silicon dioxide/polyetherimide (Fe3O4@BaTiO3@SiO2/PEI) nanocomposite, which possesses high-temperature durability, high energy storage density, and efficient charge-discharge performance. The nanocomposite achieves a dielectric constant of 10.6, a dielectric loss of 0.017, a high energy density of 5.82 J cm(-3), and a charge-discharge efficiency (& eta;) of 72% with a filler content of 9 wt%. This research provides new insights and experimental evidence for the design and development of high-performance dielectric materials, having significant implications for electronic devices and energy storage.
Article
Computer Science, Information Systems
Naveenbalaji Gowthaman, Viranjay M. Srivastava
Summary: The research focuses on an analytical model of the lightly doped Cylindrical Surrounding Double-Gate (CSDG) MOSFET and its capacitive modeling. Results show that the inclusion of 2D electron gas in the core of CSDG MOSFET increases the transconductance value significantly. This novel model occupies less area on the board, making routing more accessible, and is suitable for high-frequency/RF applications.
Article
Engineering, Electrical & Electronic
S. Cristoloveanu, G. Ghibaudo
Summary: The core-shell structure offers fundamental advantages to junctionless MOSFETs, including normally-off operation, high charge, excellent mobility, and very high current drive.
SOLID-STATE ELECTRONICS
(2022)
Article
Materials Science, Ceramics
Dajun Hou, Jing Zhou, Wen Chen, Pengchao Zhang, Jie Shen, Zelang Jian
Summary: High dielectric constant polymer dielectrics have garnered attention in flexible electronics. However, the increase in dielectric constant often leads to an increase in dielectric loss, posing a paradox. This study reports the use of core@double shell structured filler/PVDF composites to overcome this paradox. The composites, consisting of BaTiO3 as the core, conductive carbon as the inner shell, and insulating polydopamine as the outer shell, exhibit outstanding dielectric performance, with a dielectric constant of 45 and a dielectric loss of 0.053 at 10(3) Hz. This improvement can be attributed to the enhanced interfacial polarization induced by the inner carbon shell and the blockade of conductive paths caused by the outer PDA shell. These findings highlight the potential of rational design of core@double shell structured hybrid fillers for optimizing the overall dielectric performance of PVDF-based composites.
CERAMICS INTERNATIONAL
(2022)
Article
Engineering, Electrical & Electronic
Nitish Kumar, Vaibhav Purwar, Himanshi Awasthi, Rajeev Gupta, Kunal Singh, Sarvesh Dubey
Summary: This article focuses on the analytical modeling of the threshold voltage of an ultra-thin nanotube Junctionless double-gate-all-around (NJL-DGAA) MOSFET, exploring the surface potential between inner and outer gates, drain-induced barrier lowering (DIBL) as an indicator of short-channel effects, and quantum confinement effects through quantum mechanical correction. The model results are compared with ATLAS TCAD simulations, showing good agreement.
MICROELECTRONICS JOURNAL
(2021)
Article
Engineering, Electrical & Electronic
Apoorva, Naveen Kumar, S. Intekhab Amin, Sunny Anand
Summary: The research explores a dopingless nanotube tunnel field-effect transistor based on a ferroelectric material, utilizing a PZT gate stack to induce negative capacitance for improved electrostatic control and reduced power consumption. Investigation also includes studying different thicknesses of the dielectric PZT material, resulting in lower subthreshold slope and threshold voltage for the device.
IET CIRCUITS DEVICES & SYSTEMS
(2021)