Vertical Sandwich GAA FETs With Self-Aligned High-k Metal Gate Made by Quasi Atomic Layer Etching Process

出版年份 2021 全文链接

标题

作者

关键词

出版物

Volume 68, Issue 6, Pages 2604-2610

出版商

Institute of Electrical and Electronics Engineers (IEEE)

发表日期

2021-04-29

DOI

10.1109/ted.2021.3072879

Explore over 25,000 new funding opportunities and over 6,000,000 successful grants.

Explore

Interested in hosting your own webinar? Check the schedule and propose your idea to the Peeref Content Team.

Create Now