SOT and STT-Based 4-Bit MRAM Cell for High-Density Memory Applications

标题
SOT and STT-Based 4-Bit MRAM Cell for High-Density Memory Applications
作者
关键词
-
出版物
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 68, Issue 9, Pages 4384-4390
出版商
Institute of Electrical and Electronics Engineers (IEEE)
发表日期
2021-07-27
DOI
10.1109/ted.2021.3097294

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