4.6 Article

Temperature dependence of optical centers in Ib diamond characterized by photoluminescence spectra

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DIAMOND AND RELATED MATERIALS
卷 116, 期 -, 页码 -

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ELSEVIER SCIENCE SA
DOI: 10.1016/j.diamond.2021.108389

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资金

  1. National Natural Science Foundation of China [52035009, 51575389]
  2. 2020 Mobility Programme of the Sino-German Center for Research Promotion [M0396]
  3. '111' project by the State Administration of Foreign Experts Affairs
  4. Ministry of Education of China [B07014]

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The optical properties of defects in Ib diamond prepared by CVD and HPHT methods were studied using photoluminescence in a temperature range from 77 to 297 K. The temperature dependence of color centers in diamond and the zero-phonon line shift, intensity, and FWHM were analyzed. The study showed significant temperature dependence for the ZPL, with potential for temperature sensing, and a cubic function was found to well describe the broadening of ZPLs.
The optical properties of defects in Ib diamond prepared by Chemical Vapor Deposition (CVD) and High Pressure High Temperature (HPHT) methods are studied by photoluminescence in a temperature range of 77- 297 K. The temperature dependence of color centers in diamond of 2.65 eV center,NV0,NV-, SiV-, 3H is studied. The zero-phonon line (ZPL) shift, intensity and full width at half maxima (FWHM) have a strong temperature dependence. The study shows that, due to the expansion of the lattice and the enhancement of the electron-phonon coupling strength, the ZPL shift can be described by the modified Varshni model which shows great potential in temperature sensing. The FWHM of ZPL matches a cubic function of temperature, this model can be employed to well describe the broadening of ZPLs in the defect-rich diamond. And the thermal quenching of absolute PL intensity can be described by the Arrhenius equation. Meanwhile, the difference of variable PL signal between CVD and HPHT samples is analyzed.

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