P213 BN: a novel large-cell boron nitride polymorph

A new boron nitride polymorph, P2(1)3 BN (space group: P2(1)3), is investigated by first-principles calculations, including its structural properties, stability, elastic properties, anisotropy and electronic properties. It is found that the new boron nitride polymorph P2(1)3 BN is mechanically, dynamically and thermodynamically stable. The bulk modulus (B), shear modulus (G) and Young's modulus of P2(1)3 BN are 91 GPa, 41 GPa and 107 GPa, respectively, all of which are larger than that of Y carbon and TY carbon. By comparing with c-BN, the Young's modulus, shear modulus and Poisson's ratio of P2(1)3 BN show tiny anisotropy in the (001), (010), (100) and (111) planes. At the same time, in contrast with most boron nitride polymorphs, P2(1)3 BN is a semiconductor material with a smaller band gap of 1.826 eV. The Debye temperature and the anisotropic sound velocities of P2(1)3 BN are also investigated in this work.

Automated summary

The study shows that the new boron nitride polymorph P2(1)3 BN is mechanically, dynamically and thermodynamically stable, with large modulus values and tiny anisotropy on different planes. Additionally, it is a semiconductor material with a smaller band gap compared to most boron nitride polymorphs.