A critical study on different hydrogen plasma treatment methods of a-Si: H/c-Si interface for enhanced defect passivation

标题
A critical study on different hydrogen plasma treatment methods of a-Si: H/c-Si interface for enhanced defect passivation
作者
关键词
PECVD, a-Si:H, Surface passivation, H, 2, plasma treatment, Silicon heterojunction solar cells
出版物
APPLIED SURFACE SCIENCE
Volume 553, Issue -, Pages 149551
出版商
Elsevier BV
发表日期
2021-03-20
DOI
10.1016/j.apsusc.2021.149551

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