期刊
ANGEWANDTE CHEMIE-INTERNATIONAL EDITION
卷 60, 期 37, 页码 20498-20503出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/anie.202107848
关键词
energy gap law; hybridized pi-bonding; non-bonding orbitals; OLEDs; polycyclic heteroaromatics; shallow potential energy surfaces
资金
- National Key Basic Research and Development Program of China [2020YFA0715000]
- National Science Fund of China [51903137, 61890942]
- China Postdoctoral Science Foundation [2019M650628]
- Guangdong Major Project of Basic and Applied Basic Research [2019B030302009]
- Foshan Xianhu Laboratory of the Advanced Energy Science and Technology Guangdong Laboratory [XHT2020-005]
Efficient deep-red organic emitters with high quantum efficiencies were developed by constructing polycyclic heteroaromatics with multiple boron and nitrogen atoms. The introduction of specific structures led to restricted π-bonding states and shallow potential energy surfaces, enabling the emitters to achieve high quantum efficiencies in a normal planar organic light-emitting diode structure.
Efficient organic emitters in the deep-red region are rare due to the energy gap law. Herein, multiple boron (B)- and nitrogen (N)-atoms embedded polycyclic heteroaromatics featuring hybridized pi-bonding/ non-bonding molecular orbitals are constructed, providing a way to overcome the above luminescent boundary. The introduction of B-phenyl-B and N-phenyl-N structures enhances the electronic coupling of those para-positioned atoms, forming restricted pi-bonds on the phenyl-core for delocalized excited states and thus a narrow energy gap. The mutually ortho-positioned B- and N-atoms also induce a multi-resonance effect on the peripheral skeleton for the non-bonding orbitals, creating shallow potential energy surfaces to eliminate the high-frequency vibrational quenching. The corresponding deep-red emitters with peaks at 662 and 692 nm exhibit narrow full-width at half-maximums of 38 nm, high radiative decay rates of ca. 10(8) s(-1), approximate to 100 % photo-luminescence quantum yields and record-high maximum external quantum efficiencies of ca. 28 % in a normal planar organic light-emitting diode structure, simultaneously.
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