PdPSe: Component-Fusion-Based Topology Designer of Two-Dimensional Semiconductor

Novel 2D semiconductors play an increasingly important role in modern nanoelectronics and optoelectronics. Herein, a novel topology designer based on component fusion is introduced, featured by the submolecular component integration and properties inheritance. As expected, a new air-stable 2D semiconductor PdPSe with a tailored puckered structure is successfully designed and synthesized via this method. Notably, the monolayer of PdPSe is constructed by two sublayers via P-P bonds, different from 2D typical transition metal materials with sandwich-structured monolayers. With the expected orthorhombic symmetry and intralayer puckering, PdPSe displays a strong Raman anisotropy. The field-effect transistors and photodetectors based on few-layer PdPSe demonstrate good electronic properties with high carrier mobility of approximate to 35 cm(2) V-1 s(-1) and a high on/off ratio of 10(6), as well as excellent optoelectronic performance, including high photoresponsivity, photogain, and detectivity with values up to 1.06 x 10(5) A W-1, 2.47 x 10(7)%, and 4.84 x 10(10) Jones, respectively. These results make PdPSe a promising air-stable 2D semiconductor for various electronic and optoelectronic applications. This work suggests that the component-fusion-based topology designer is a novel approach to tailor 2D materials with expected structures and interesting properties.

Automated summary

A new air-stable 2D semiconductor PdPSe with tailored puckered structure has been successfully designed and synthesized using a novel component fusion-based topology designer, resulting in promising electronic and optoelectronic applications. The field-effect transistors and photodetectors based on few-layer PdPSe demonstrate good electronic properties with high carrier mobility and excellent optoelectronic performance.