The interfacial properties of SrRuO3/MoS2 heterojunction: a first-principles study

Magnetism by Interfacial Hybridization and p-type Doping of MoS2 in Fe4N/MoS2 Superlattices: A First-Principles Study

(2014) Nan Feng et al.   ACS Applied Materials & Interfaces

Few-Layer MoS2: A Promising Layered Semiconductor

(2014) Rudren Ganatra et al.   ACS Nano

High-performance MoS2 transistors with low-resistance molybdenum contacts

(2014) Jiahao Kang et al.   APPLIED PHYSICS LETTERS

Tuning magnetism of monolayer MoS2 by doping vacancy and applying strain

(2014) Huiling Zheng et al.   APPLIED PHYSICS LETTERS

The Unusual Mechanism of Partial Fermi Level Pinning at Metal–MoS2 Interfaces

(2014) Cheng Gong et al.   NANO LETTERS

First-principles Raman spectra of MoS2, WS2 and their heterostructures

(2014) Liangbo Liang et al.   Nanoscale

Two-dimensional ferromagnet/semiconductor transition metal dichalcogenide contacts:p-type Schottky barrier and spin-injection control

(2014) Li-Yong Gan et al.   PHYSICAL REVIEW B

Termination-dependent electronic and magnetic properties of ultrathinSrRuO3(111) films onSrTiO3

(2014) Bongjae Kim et al.   PHYSICAL REVIEW B

Characterization of metal contacts for two-dimensional MoS2 nanoflakes

(2013) Sumeet Walia et al.   APPLIED PHYSICS LETTERS

Experimental Demonstration of Continuous Electronic Structure Tuning via Strain in Atomically Thin MoS2

(2013) Keliang He et al.   NANO LETTERS

Tuning the Electronic and Chemical Properties of Monolayer MoS2 Adsorbed on Transition Metal Substrates

(2013) Wei Chen et al.   NANO LETTERS

Control of Schottky Barriers in Single Layer MoS2 Transistors with Ferromagnetic Contacts

(2013) Jen-Ru Chen et al.   NANO LETTERS

MoS2/MX2 heterobilayers: bandgap engineering via tensile strain or external electrical field

(2013) Ning Lu et al.   Nanoscale

Origin of then-type andp-type conductivity of MoS2monolayers on a SiO2substrate

(2013) Kapildeb Dolui et al.   PHYSICAL REVIEW B

First-principles analysis of MoS2/Ti2C and MoS2/Ti2CY2(Y=Fand OH) all-2D semiconductor/metal contacts

(2013) Li-Yong Gan et al.   PHYSICAL REVIEW B

High Performance Multilayer MoS2 Transistors with Scandium Contacts

(2012) Saptarshi Das et al.   NANO LETTERS

Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

(2012) Qing Hua Wang et al.   Nature Nanotechnology

Single layer MoS2on the Cu(111) surface: First-principles electronic structure calculations

(2012) Duy Le et al.   PHYSICAL REVIEW B

Coupled Spin and Valley Physics in Monolayers ofMoS2and Other Group-VI Dichalcogenides

(2012) Di Xiao et al.   PHYSICAL REVIEW LETTERS

Magnetoelectric effect and critical thickness for ferroelectricity in Co/BaTiO3/Co multiferroic tunnel junctions

(2011) Dan Cao et al.   JOURNAL OF APPLIED PHYSICS

Single-layer MoS2 transistors

(2011) B. Radisavljevic et al.   Nature Nanotechnology

Band-gap transition induced by interlayer van der Waals interaction in MoS2

(2011) S. W. Han et al.   PHYSICAL REVIEW B

Emerging Photoluminescence in Monolayer MoS2

(2010) Andrea Splendiani et al.   NANO LETTERS

Atomically ThinMoS2: A New Direct-Gap Semiconductor

(2010) Kin Fai Mak et al.   PHYSICAL REVIEW LETTERS

Doping Graphene with Metal Contacts

(2008) G. Giovannetti et al.   PHYSICAL REVIEW LETTERS