MeV-Fe ions implantation of GaAs - Induced morphological and structural modification of porous GaAs

Porous GaAs were formed by electrochemical etching of n-type GaAs (100) substrates implanted by iron ion beam with energy of 2 MeV at low ion fluence of 7.8 x 10(+13) Fe++/cm(2). The influence of the implantation on morphological and structural properties of the formed porous GaAs was investigated using scanning electron microscopy (SEM), energy dispersive x-ray spectroscopy (EDS), X-ray diffraction (XRD), X-ray photoelectron spectroscopic (XPS) and micro-Raman scattering. It is shown that the implantation process leads to significant modifications in both the morphological aspects and the chemical constitution of the formed porous GaAs layer. XRD, Raman and XPS results revels that the porous layer formed on the un-implanted substrate has a Ga-oxide rich surface, while the one formed on the implanted substrate is highly passivated with As-oxide.

Automated summary

Porous GaAs materials were successfully fabricated by electrochemical etching of n-type GaAs (100) substrates implanted with iron ions, showing significant changes in both morphological characteristics and chemical composition of the formed porous layer due to the implantation process.