期刊
NATURE MATERIALS
卷 20, 期 9, 页码 1203-+出版社
NATURE PORTFOLIO
DOI: 10.1038/s41563-021-01001-7
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资金
- National Natural Science Foundation of China [51972279, 11534010]
- Research Grants Council of Hong Kong [PolyU 153025/19P, PolyU 153039/17P]
- PolyU Grant [1-ZVGH]
Pulsed laser deposition enables centimetre-scale growth of few-layer black phosphorous with high crystalline quality and homogeneity. This breakthrough in large-scale growth paves the way for potential applications in the information industry.
Centimetre-scale growth of few-layer black phosphorous with high crystalline quality and homogeneity is realized by pulsed laser deposition. Two-dimensional materials provide opportunities for developing semiconductor applications at atomistic thickness to break the limits of silicon technology. Black phosphorus (BP), as a layered semiconductor with controllable bandgap and high carrier mobility, is one of the most promising candidates for transistor devices at atomistic thickness(1-4). However, the lack of large-scale growth greatly hinders its development in devices. Here, we report the growth of ultrathin BP on the centimetre scale through pulsed laser deposition. The unique plasma-activated region induced by laser ablation provides highly desirable conditions for BP cluster formation and transportation(5,6), facilitating growth. Furthermore, we fabricated large-scale field-effect transistor arrays on BP films, yielding appealing hole mobility of up to 213 and 617 cm(2) V-1 s(-1) at 295 and 250 K, respectively. Our results pave the way for further developing BP-based wafer-scale devices with potential applications in the information industry.
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