Low-noise, high-detectivity, polarization-sensitive, room-temperature infrared photodetectors based on Ge quantum dot-decorated Si-on-insulator nanowire field-effect transistors
出版年份 2021 全文链接
标题
Low-noise, high-detectivity, polarization-sensitive, room-temperature infrared photodetectors based on Ge quantum dot-decorated Si-on-insulator nanowire field-effect transistors
作者
关键词
-
出版物
NANOTECHNOLOGY
Volume 32, Issue 31, Pages 315205
出版商
IOP Publishing
发表日期
2021-04-13
DOI
10.1088/1361-6528/abf6f0
参考文献
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