4.8 Article

Low Roll-Off and High Stable Electroluminescence in Three-Dimensional FAPbI3 Perovskites with Bifunctional-Molecule Additives

期刊

NANO LETTERS
卷 21, 期 9, 页码 3738-3744

出版社

AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.0c04900

关键词

perovskite light-emitting diodes; brightness; efficiency roll-off; stability

资金

  1. Major Research Plan of the National Natural Science Foundation of China [91733302]
  2. National Natural Science Foundation of China [61875084, 61922041, 61961160733, 61935017, 21773294]
  3. National Science Fund for Distinguished Young Scholars [61725502]
  4. Natural Science Foundation of Jiangsu Province, China [BK20180085]
  5. Major Program of Natural Science Research of Jiangsu Higher Education Institutions of China [19KJA520004]
  6. Department of Science & Technology of Shaanxi Province [2020GXLH-Z-024]
  7. NPU [2020GXLH-Z-024]
  8. Synergetic Innovation Center for Organic Electronics and Information Displays

向作者/读者索取更多资源

By introducing a specific additive, the defects and ion migration issues in 3D perovskite LED have been successfully suppressed, leading to high brightness and efficiency in the LED device.
Three-dimensional (3D) perovskites have been demonstrated as an effective strategy to achieve efficient light-emitting diodes (LEDs) at high brightness. However, most 3D perovskite LEDs still suffer from serious efficiency roll-off. Here, using FAPbI(3) as a model system, we find that the main reason for efficiency droop and degradation in 3D perovskite LEDs is defects and the ion migration under electrical stress. By introducing bifunctional-molecule 3-chlorobenzylamine additive into the perovskite precursor solution, the detrimental effects can be significantly suppressed through the growth of high crystalline perovskites and defect passivation. This approach leads to bright near-infrared perovskite LEDs with a peak external quantum efficiency of 16.6%, which sustains 80% of its peak value at a high current density of 460 mA cm(-2), corresponding to a high brightness of 300 W sr(-1) m(-2). Moreover, the device exhibits a record half-lifetime of 49 h under a constant current density of 100 mA cm(-2).

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