Predominance of Subsurface and Bulk Oxygen Vacancies in Reduced Manganese Oxide

Oxygen vacancies (V(o)s) play a vital role in the physical and chemical properties of oxide materials and their applications. Because V(o)s are first produced on oxide surfaces, it has been often recognized that they are richer at the top surface than at the subsurface or bulk region. Here the depth distribution of V(o)s in reduced manganese oxide (MnOx) films has been studied by a combination of ion-sputtering treatment and variable-angle X-ray photoelectron spectroscopy measurement. The density of V(o)s on the top surface is determined to be similar to 8% lower than that in the subsurface region after reduction treatment of the oxide in CO at 573 K. Density functional theory calculations show that lattice oxygen atoms in the bulk tend to migrate and fill into the V(o)s on the top surface with a barrier of 0.94 eV at most. The stability of V(o)s in the bulk is higher than that on the surface via a reduced Mn3O4 skeleton, which can be reflected by the energy of oxygen filling at the V-o.

Automated summary

Oxygen vacancies play a crucial role in the physical and chemical properties of oxide materials, and a study on reduced manganese oxide films shows that the density of oxygen vacancies on the top surface is lower than in the subsurface region. Density functional theory calculations reveal that lattice oxygen atoms in the bulk tend to fill into the oxygen vacancies on the top surface with a barrier of up to 0.94 eV. The stability of oxygen vacancies in the bulk is higher than on the surface, as reflected by the energy of oxygen filling at the vacancies.