4.7 Article

Structural, electrical properties and photoluminescence analyses of the terbium doped barium titanate

期刊

JOURNAL OF ALLOYS AND COMPOUNDS
卷 878, 期 -, 页码 -

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ELSEVIER SCIENCE SA
DOI: 10.1016/j.jallcom.2021.160380

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Terbium doped barium titanate; Hydrothermal synthesis; Dielectric properties; Photoluminescence

资金

  1. Romanian Ministry of Research [PN18-110101]

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The study synthesized polycrystalline Ba1-xTbxTiO3 materials and analyzed their photoluminescence and dielectric properties, revealing that increasing terbium content reduces Curie temperature and increases phase transition diffuseness. UV-vis reflectance spectra showed a decrease in band gap energy with higher Tb content, while photoluminescence spectra demonstrated terbium enhances photoluminescence accompanied by self-trapped exciton emission.
Multifunctional materials integrating optical and electric properties into a composite or into a doped single-phase material have attracted much attention from scientists for future optoelectronic devices. In this work, polycrystalline Ba1-xTbxTiO3, x = 0.00, 0.01 and 0.05 materials were synthesized by hydrothermal route and their photoluminescence and dielectric properties were studied. The as-prepared powders showed a microstructure consisting of grains with the shape of cube; and average particle size ranging from 75 nm to 150 nm. The investigated temperature dependence of dielectric permittivity of Ba1-xTbxTiO3 ceramics revealed a decrease of the Curie temperature (Tc) with increasing terbium content, and a more pronounced degree of diffuseness of phase transition. The resistivity at room temperature was discussed in terms of positive temperature coefficient of resistance (PTRC) effect. UV-vis reflectance spectra of Ba1-xTbxTiO3 samples showed a decrease of the band gap energy with the increase of Tb amount, due to the band-gap narrowing effect. The photoluminescence spectra recorded for Tb doped BaTiO3 materials, at 80 K, evidenced the typical f-f luminescence lines of the Tb3+ accompanied the broad luminescence band at about 425 nm due to self-trapped exciton recombination. These results demonstrated that the terbium enhances the dielectric properties and photoluminescence simultaneously, being suitable for electronic applications. (C) 2021 Elsevier B.V. All rights reserved.

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