期刊
APPLIED PHYSICS LETTERS
卷 118, 期 20, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/5.0049521
关键词
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资金
- Center for Integrated Nanotechnologies, a Department of Energy office of Basic Energy Sciences
- U.S. Department of Energy National Nuclear Security Administration [DE-NA0003525]
The strength distribution of ultra-small polysilicon bend specimens measured through experiment and prediction suggest that these specimens may be at the limit of extreme-value scaling and contain only one strength-controlling flaw per specimen.
The strength distribution of polysilicon bend specimens, approximately 10 mu m in size, is measured using a high-throughput microelectromechanical system fabrication and testing method. The distribution is predicted from reference tests on tensile specimens and finite element analysis of the bend specimen geometry incorporated into a stochastic extreme-value strength framework. Agreement between experiment and prediction suggests that the ultra-small specimens may be at the limit of extreme-value scaling and contain only one strength-controlling flaw/specimen.
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