期刊
ADVANCED MATERIALS
卷 33, 期 25, 页码 -出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.202008329
关键词
ambipolar transistors; black phosphorus; carrier distribution; negative differential resistance
类别
资金
- National Key R&D Program of China [2018YFA0703700, 2016YFA0200700]
- National Natural Science Foundation of China [91964203, 61851403, 61625401, 62004142]
- Strategic Priority Research Program of Chinese Academy of Sciences [XDB30000000]
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication
This study reports the modulation of a unique NDR effect in ambipolar black phosphorus transistors, which exhibit high peak current density and operating temperature. The NDR peak current and voltage can be effectively modulated by the strong coupling between the channel and the gate electrode.
Negative differential resistance (NDR), which describes the current decrease as the applied bias increases, holds great potential for varieties of electronic applications including radio-frequency oscillators, multipliers, and multivalue logics. Here, the modulation of a unique NDR effect in ambipolar black phosphorus (BP) transistors is reported, which is activated by specific electrical field dependence of lateral carrier distribution and is distinct from conventional NDR devices that rely on quantum tunneling. The NDR device exhibits a high peak current density (34 mu A mu m(-1)) and a high operating temperature. More importantly, due to the strong coupling between the channel and the gate electrode, both the NDR peak current and peak/valley voltages can be effectively modulated by the electrostatic gate. Furthermore, it is demonstrated that light can serve as an additional terminal for NDR modulation. The findings could provide an important insight into the transport behavior of BP transistors and contribute to the design of ambipolar-semiconductor-based electrical circuits.
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