4.8 Article

Green Perovskite Light-Emitting Diodes with 200 Hours Stability and 16% Efficiency: Cross-Linking Strategy and Mechanism

期刊

ADVANCED FUNCTIONAL MATERIALS
卷 31, 期 26, 页码 -

出版社

WILEY-V C H VERLAG GMBH
DOI: 10.1002/adfm.202011003

关键词

cross‐ linking passivation; ion‐ migration; light‐ emitting diodes; perovskites; stabilities

资金

  1. NSFC [61725402]
  2. National ten thousand talents plan [W03020394]
  3. Six Top Talent Innovation Teams [TD-XCL-004]
  4. International Cooperation Program of Jiangsu Province [BZ2020063]
  5. Fundamental Research Funds for the Central Universities [30919012107]

向作者/读者索取更多资源

A methylene-bis-acrylamide cross-linking strategy is proposed to enhance the stability of perovskite light-emitting diodes (PeLEDs) by increasing the binding energy and activation energy, thereby preventing ions from migrating inside and across crystals. This strategy not only improves the external quantum efficiency, but also extends the half-life of the devices, making them more stable during continuous operation.
According to the thinner emitting layer and stronger electric field in perovskite light-emitting diodes (PeLEDs) than those in perovskite solar cells, the strong electric-field-driven ion-migration is a key issue for the operational stability of PeLEDs. Here, a methylene-bis-acrylamide cross-linking strategy is proposed to both passivate defects and suppress ion-migration with an emphasis on the suppressing mechanism via in situ investigations. As typical results, in addition to the enhanced external quantum efficiency (EQE, 16.8%), PeLEDs exhibit preferable operational stability with a half lifetime (T-50) of 208 h under continuous operation with an initial luminance of 100 cd m(-2). Moreover, the EQE of cross-linked LEDs can maintain above 15% during 25 times scanning as the devices are measured every 4 days. To the authors' knowledge, this is the highest stability published until now for high-efficiency PeLEDs with EQE over 15%. The in situ/ex situ mechanism investigation demonstrates that such cross-linking increases binding energy from 0.54 to 0.92 eV and activation energy from 0.21 to 0.5 eV. Hence, it suppresses ligands breaking away and ion migration, which prevents ions from moving inside and across crystals. The proposed cross-linking passivation strategy thus provides an effective methodology to fabricate stable perovskites-based photoelectric devices.

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