Optical Distance Measurement Based on Induced Nonlinear Photoresponse of High-Performance Organic Near-Infrared Photodetectors

Extraction barriers are usually undesired in organic semiconductor devices since they lead to reduced device performance. In this work, we intentionally introduce an extraction barrier for holes, leading to nonlinear photoresponse. The effect is utilized in near-infrared (NIR) organic photodetectors (OPDs) to perform distance measurements, as delineated in the focus-induced photoresponse technique (FIP). The extraction barrier is introduced by inserting an anodic interlayer with deeper highest occupied molecular orbital (HOMO), compared to the donor material, into a well-performing OPD. With increasing irradiance, achieved by decreasing the illumination spot area on the OPD, a higher number of holes pile up at the anode, counteracting the built-in field and increasing charge-carrier recombination in the bulk. This intended nonlinear response of the photocurrent to the irradiance allows determining the distance between the OPD and the light source. We demonstrate fully vacuum-deposited organic NIR optical distance photodetectors with a detection area up to 256 mm(2) and detection wavelengths at 850 and 1060 nm. Such NIR OPDs have a high potential for precise, robust, low-cost, and simple optical distance measurement setups.

Automated summary

In this study, an extraction barrier for holes was intentionally introduced in organic semiconductor devices to achieve nonlinear photoresponse for distance measurements. By manipulating the illumination spot area and irradiance, the distance between the organic photodetector (OPD) and the light source can be determined accurately. The fully vacuum-deposited organic NIR optical distance photodetectors showed high potential for precise, robust, low-cost, and simple optical distance measurement setups.