NIR self-powered photodetection and gate tunable rectification behavior in 2D GeSe/MoSe2 heterojunction diode

Two-dimensional (2D) heterostructure with atomically sharp interface holds promise for future electronics and optoelectronics because of their multi-functionalities. Here we demonstrate gate-tunable rectifying behavior and self-powered photovoltaic characteristics of novel p-GeSe/n-MoSe2 van der waal heterojunction (vdW HJ). A substantial increase in rectification behavior was observed when the devices were subjected to gate bias. The highest rectification of similar to 1 x 10(4) was obtained at V-g = - 40 V. Remarkable rectification behavior of the p-n diode is solely attributed to the sharp interface between metal and GeSe/MoSe2. The device exhibits a high photoresponse towards NIR (850 nm). A high photoresponsivity of 465 mAW(-1), an excellent EQE of 670%, a fast rise time of 180 ms, and a decay time of 360 ms were obtained. Furthermore, the diode exhibits detectivity (D) of 7.3 x 10(9) Jones, the normalized photocurrent to the dark current ratio (NPDR) of 1.9 x 10(10)W(-1), and the noise equivalent power (NEP) of 1.22 x 10(-13)WHz(-1/2). The strong light-matter interaction stipulates that the GeSe/MoSe2 diode may open new realms in multi-functional electronics and optoelectronics applications.

Automated summary

The novel p-GeSe/n-MoSe2 van der waal heterojunction demonstrated tunable rectifying behavior and self-powered photovoltaic characteristics, showing great potential for future applications.