4.5 Article

Artificial intelligence approach on predicting current values of polymer interface Schottky diode based on temperature and voltage: An experimental study

期刊

SUPERLATTICES AND MICROSTRUCTURES
卷 153, 期 -, 页码 -

出版社

ACADEMIC PRESS LTD- ELSEVIER SCIENCE LTD
DOI: 10.1016/j.spmi.2021.106864

关键词

Schottky diode; Barrier diode; MEH-PPV; Current-voltage characteristics; Artificial neural network

向作者/读者索取更多资源

A neural network model was developed to predict the current values of a 6H?SiC/MEH-PPV Schottky diode with a polymer interface based on temperature and voltage. The model showed high accuracy with an average error rate of -0.15% in predicting the current values.
In this study, an artificial neural network model has been developed to predict the current values of a 6H?SiC/MEH-PPV Schottky diode with polymer-interface, depending on temperature and voltage. In the training of the multi-layer perceptron network model with 13 neurons in its hidden layer, the experimentally measured current values between 100 and 250 K temperature and -3V to + 3V voltage range have been used. In the input layer of the model developed with a total of 244 experimental data, temperature, and voltage values have been defined and current values were obtained in the output layer. The mean square error value of the artificial neural network is 1.63E-08 and the R-value is 0.99999. The developed model has been able to predict the current values of the polymer-interfaced 6H?SiC/MEH-PPV Schottky diode with an average error rate of -0.15% depending on temperature and voltage, with high accuracy.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.5
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据