期刊
SMALL
卷 17, 期 13, 页码 -出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/smll.202006496
关键词
2D materials; photodetector; Si; Te-2; (3); silicon based; transistor
类别
资金
- National Natural Science Foundation of China [51902001]
- Recruitment Program for Leading Talent Team of Anhui Province [2019-16]
- Anhui Provincial Natural Science Foundation [1908085QE17]
Silicon-based semiconductor materials have dominated modern technology, but 2D materials are emerging as promising candidates for the next-generation semiconductor industry. Silicon-based 2D materials offer advantages in compatibility and integration. Silicon telluride exhibits excellent photoelectric performance and can be used in high-performance optoelectronic devices.
Silicon-based semiconductor materials dominate modern technology for more than half a century with extraordinary electrical-optical performance and mutual processing compatibility. Now, 2D materials have rapidly established themselves as prospective candidates for the next-generation semiconductor industry because of their novel properties. Considering chemical and processing compatibility, silicon-based 2D materials possess significant advantages in integrating with silicon. Here, a systematic study is reported on the structural, electrical, and optical performance of silicon telluride (Si2Te3) 2D material, a IV-VI silicon-based semiconductor with a layered structure. The ultrawide photoluminescence (PL) spectra in the range of 550-1050 nm reveals the intrinsic defects in Si2Te3. The Si2Te3-based field-effect transistors (FETs) and photodetectors show a typical p-type behavior and a remarkable broadband spectral response in the range of 405-1064 nm. Notably, the photoresponsivity and detectivity of the photodetector device with 13.5 nm in thickness and upon 405 nm illumination can reach up to 65 A W-1 and 2.81 x 10(12) Jones, respectively, outperforming many traditional broadband photodetectors. It is believed this work will excite interests in further exploring the practical application of 2D silicon-based materials in the field of optoelectronics.
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