4.6 Article

Use of nanostructured alumina thin films in multilayer anti-reflective coatings

期刊

NANOTECHNOLOGY
卷 32, 期 21, 页码 -

出版社

IOP PUBLISHING LTD
DOI: 10.1088/1361-6528/abe747

关键词

de-ionized water; thin film coatings; porosity; aluminum oxide; multilayer

资金

  1. European Research Councill (ERC AdG AMETIST) [695116]
  2. Academy of Finland PREIN flagship project [320165]
  3. European Research Council (ERC) [695116] Funding Source: European Research Council (ERC)

向作者/读者索取更多资源

A new method involving treatment of the coating with heated de-ionized water after the deposition of aluminum oxide has been developed to create nanostructured aluminum oxide anti-reflection coatings with a low average reflectivity of approximately 3.3% in a broad spectrum range. This method, which is non-toxic and low-cost, is also compatible with volume manufacturing technologies used in photovoltaics such as ion beam sputtering and electron beam evaporation.
A new method for modification of planar multilayer structures to create nanostructured aluminum oxide anti-reflection coatings is reported. The method is non-toxic and low-cost, being based on treatment of the coating with heated de-ionized water after the deposition of aluminum oxide. The results show that the method provides a viable alternative for attaining a low reflectance ARC. In particular, a low average reflectivity of similar to 3.3% is demonstrated in a broadband spectrum extending from 400 nm to 2000 nm for ARCs deposited on GaInP solar-cells, the typical material used as top-junction in solar cell tandem architectures. Moreover, the process is compatible with volume manufacturing technologies used in photovoltaics, such as ion beam sputtering and electron beam evaporation.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.6
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

Article Nanoscience & Nanotechnology

Cathodoluminescence mapping of electron concentration in MBE-grown GaAs:Te nanowires

Capucine Tong, Thomas Bidaud, Eero Koivusalo, Marcelo Rizzo Piton, Mircea Guina, Helder Vinicius Avanco Galeti, Yara Galvao Gobato, Andrea Cattoni, Teemu Hakkarainen, Stephane Collin

Summary: Cathodoluminescence mapping is utilized to investigate the electron concentration gradient of Te-doped GaAs nanowires, revealing distinct electron concentration levels and gradients in nanowires grown at different temperatures.

NANOTECHNOLOGY (2022)

Article Optics

Polarized spectroscopy and SESAM mode-locking of Tm,Ho:CALGO

Yicheng Wang, Pavel Loiko, Yongguang Zhao, Zhongben Pan, Weidong Chen, Mark Mero, Xiaodong Xu, Jun Xu, Xavier Mateos, Arkady Major, Mircea Guina, Valentin Petrov, Uwe Griebner

Summary: In this study, a Tm,Ho:CALGO laser passively mode-locked by a GaSb-based SESAM is reported. The laser generates pulses as short as 52 fs, with a central wavelength of 2015 nm and a broad spectral bandwidth of 82 nm. The laser performance is attributed to the combined gain profiles of the dopants and the polarized spectroscopic properties of Ho3+ ions.

OPTICS EXPRESS (2022)

Article Optics

VECSEL systems for quantum information processing with trapped beryllium ions

S. C. Burd, J. -P. Penttinen, P. -Y. Hou, H. M. Knaack, S. Ranta, M. Maki, E. Kantola, M. Guina, D. H. Slichter, D. Leibfried, A. C. Wilson

Summary: This article presents two systems based on vertical-external-cavity surface-emitting lasers (VECSELs) that can generate ultraviolet laser light at 235 and 313 nm wavelengths, suitable for quantum information processing with trapped beryllium ions. Each system includes a compact, single-frequency, continuous-wave VECSEL that produces high-power near-infrared light and can be tuned over tens of nanometers. One system produces 2.4 W of power at 940 nm, which is converted to 54 mW of 235 nm light for photoionization of neutral beryllium atoms. The other system uses a gain mirror based on GaInNAs/GaAs quantum wells, extending the wavelength above 1200 nm with manageable strain in the GaAs lattice, and generates 1.6 W at 1252 nm, which is converted to 41 mW of 313 nm light for laser cooling of trapped 9Be+ ions and quantum state preparation and detection. The 313 nm system is also suitable for implementing high-fidelity quantum gates.

JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS (2023)

Article Engineering, Electrical & Electronic

Comprehensively analysis of hot electron transport in as-grown and thermally annealed n-type modulation-doped Al0.15Ga0.85As/GaAs0.96Bi0.4 quantum well structure

Omer Donmez, Mustafa Aydin, Selman Mutlu, Janne Puustinen, Joonas Hilska, Mircea Guina, Ayse Erol

Summary: We present experimental and analytical results on hot electron transport in as-grown and annealed n-type modulation-doped Al0.15Ga0.85As/GaAs0.96Bi0.4 quantum well structures. The drift mobility and velocity of the annealed sample are lower due to the increased 2D electron density caused by annealing. Hot electron transport occurs in parallel mode, and inter-valley transfer dominates at higher electric fields.

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING (2023)

Article Optics

Widely tunable 2 μm hybrid laser using GaSb semiconductor optical amplifiers and a Si3N4 photonics integrated reflector

Nouman Zia, Samu-pekka Ojanen, Jukka Viheriala, Eero Koivusalo, Joonas Hilska, Heidi Tuorila, Mircea Guina

Summary: This paper presents a hybrid laser that combines GaSb-based semiconductor gain chips with Si3N4 photonic integrated circuits. The low-loss features of Si3N4 waveguides are utilized to integrate a tunable Si3N4 Vernier mirror. The laser exhibits a maximum output power of 15 mW and a tuning range of about 90 nm at room temperature. The low-loss performance of various Si3N4 building blocks for photonic integrated circuits is also confirmed.

OPTICS LETTERS (2023)

Article Energy & Fuels

Enhancing intermediate band solar cell performances through quantum engineering of dot states by droplet epitaxy

Andrea Scaccabarozzi, Stefano Vichi, Sergio Bietti, Federico Cesura, Timo Aho, Mircea Guina, Federica Cappelluti, Maurizio Acciarri, Stefano Sanguinetti

Summary: We investigate the impact of quantum dot aspect ratio on the sub-gap absorption properties of GaAs/AlGaAs quantum dot intermediate band solar cells. Using droplet epitaxy, we grow AlGaAs solar cells with GaAs quantum dots, which allows for strain-free nanostructures with lattice matched materials. By varying the dot aspect ratio, we can tune the energy levels of the intermediate band, thereby altering the sub-gap absorption spectrum and charge carrier extraction. The tradeoff between thermal and optical extraction is crucial for the proper functioning of the intermediate band solar cells, with the photonic extraction mechanism from the quantum dots becoming dominant at room temperature.

PROGRESS IN PHOTOVOLTAICS (2023)

Article Engineering, Electrical & Electronic

Effect of Non-Resonant Gain Structure Design in Membrane External-Cavity Surface-Emitting Lasers

Philipp Tatar-Mathes, Hoy-My Phung, Aaron Rogers, Patrik Rajala, Sanna Rant, Mircea Guina, Hermann Kahle

Summary: This study presents the operation of a semiconductor membrane external-cavity surface-emitting laser (MECSEL) using a gain membrane with a non-resonant cavity design. The MECSEL delivers watt-level output power, comparable to state-of-the-art results. The research shows that the design criteria for the MECSEL gain region can be relaxed compared to designs using distributed Bragg reflectors, minimizing the impact of defective Fabry-Perot micro-cavity effects.

IEEE PHOTONICS TECHNOLOGY LETTERS (2023)

Article Optics

Widely Tunable (2.47-2.64 μm) Hybrid Laser Based on GaSb/GaInAsSb Quantum-Wells and a Low-Loss Si3N4 Photonic Integrated Circuit

Samu-Pekka Ojanen, Jukka Viheriala, Nouman Zia, Eero Koivusalo, Joonas Hilska, Heidi Tuorila, Mircea Guina

Summary: Photonic integrated circuits fabricated using a Si3N4 waveguide platform exhibit low losses in a wide wavelength region. A high-performance integrated laser with broad wavelength tunability near a 2.6 μm wavelength region is demonstrated, based on a Si3N4 photonic integrated circuit incorporating a tunable reflector and a AlGaInAsSb/GaSb quantum-well gain element. The platform also supports low propagation loss up to 3.5 μm.

LASER & PHOTONICS REVIEWS (2023)

Article Optics

High output power, single mode, and TEM00 operation of a multiple gain chip VECSEL using a twisted-mode configuration

D. Mitten, M. Hart, S. H. Warner, J. -P. Penttinen, M. Guina, Y. Kaneda

Summary: A vertical external cavity surface emitting laser (VECSEL) has been developed for a sodium guide star application. Stable single frequency operation with 21 W of output power near 1178 nm with multiple gain elements while lasing in the TEM00 mode has been achieved. This is the first demonstration of a high power single frequency VECSEL using a twisted-mode configuration and multiple gain mirrors located at the cavity folds.

OPTICS EXPRESS (2023)

Article Physics, Applied

Tuneable Nonlinear Spin Response in a Nonmagnetic Semiconductor

Y. Q. Huang, V Polojarvi, A. Aho, R. Isoaho, T. Hakkarainen, M. Guina, I. A. Buyanova, W. M. Chen

Summary: This study demonstrates the existence of nonlinear spin response in nonmagnetic materials and showcases it in a (Ga, N)As-InAs quantum dot coupled all-semiconductor nanostructure. The observed spin nonlinearity can be conveniently tuned with an external magnetic field and potentially operates at a speed exceeding 1 GHz.

PHYSICAL REVIEW APPLIED (2023)

Article Optics

Discretely Tunable (2594, 2629, 2670 nm) GaSb/Si3N4 Hybrid Laser for Multiwavelength Spectroscopy

Samu-Pekka Ojanen, Jukka Viheriala, Nouman Zia, Eero Koivusalo, Joonas Hilska, Heidi Tuorila, Mircea Guina

Summary: A discrete, tunable photonic integrated laser is demonstrated for multiwavelength spectroscopy. The laser combines a reflective semiconductor optical amplifier with a photonic integrated circuit, allowing for switching between three distinct emission wavelengths. The design simplifies the tuning mechanism compared to other hybrid lasers.

LASER & PHOTONICS REVIEWS (2023)

Article Chemistry, Multidisciplinary

Influence of the Bismuth Content on the Optical Properties and Photoluminescence Decay Time in GaSbBi Films

Tristan Smolka, Michal Rygala, Joonas Hilska, Janne Puustinen, Eero Koivusalo, Mircea Guina, Marcin Motyka

Summary: The optical properties of GaSbBi layers grown on GaSb (100) substrates with different bismuth contents were investigated. The band gaps of the materials were determined using Fourier-transform photoluminescence spectra, revealing the presence of localized states connected to bismuth clustering. Time-resolved photoluminescence measurements based on single-photon counting were used to determine the characteristic photoluminescence decay time constants, which showed an increase with increasing bismuth content and clustering effects.

ACS OMEGA (2023)

Article Energy & Fuels

Low bandgap GaAsNBi solar cells

Janne Puustinen, Joonas Hilska, Arto Aho, Esperanza Luna, Antti Fihlman, Mircea Guina

Summary: The development of low bandgap GaAsNBi solar cells grown using MBE is reported, and the As/Ga flux ratio is found to play an important role in controlling the solar cell performance.

SOLAR ENERGY MATERIALS AND SOLAR CELLS (2024)

Proceedings Paper Nanoscience & Nanotechnology

Development of VCSELs for cyogenic (4.2 K) optical interfaces

Jukka Viheriala, Topi Uusitalo, Heikki Virtanen, Behzad Namvar, Patrik Rajala, Sanna Ranta, Teemu Hakkarainen, Antti Tukiainen, Guilhem Almuneau, Mircea Guina

Summary: This paper presents the development of vertical cavity surface emitting lasers (VCSELs) operating at 4.2K for energy efficient optical links between cryogenic systems and room-temperature data storage systems. The design considerations, material models, and validation of required electro-optical-thermal models are discussed. Successful operation at mA-level injection is demonstrated.

2023 IEEE PHOTONICS SOCIETY SUMMER TOPICALS MEETING SERIES, SUM (2023)

暂无数据