4.8 Article

CsPbBr3 quantum dots photodetectors boosting carrier transport via molecular engineering strategy

期刊

NANO RESEARCH
卷 14, 期 11, 页码 4038-4045

出版社

TSINGHUA UNIV PRESS
DOI: 10.1007/s12274-021-3333-z

关键词

perovskite quantum dots; molecular engineering; photodetector; interface; 3,4-ethylenedioxythiophene

资金

  1. National Natural Science Foundation of China [21676093, 21776092, 21978087, 21838003, 91834301]
  2. Shanghai Scientific and Technological Innovation Project [19JC1410400, 18JC1410600]
  3. Shanghai Rising-Star Program [18QA1401500]
  4. Innovation Program of Shanghai Municipal Education Commission
  5. Program for Professor of Special Appointment (Eastern Scholar) at Shanghai Institutes of High Learning
  6. Fundamental Research Funds for the Central Universities [222201718002]

向作者/读者索取更多资源

A molecular engineering strategy using 3,4-ethylenedioxythiophene (EDOT) was proposed to enhance the performance and stability of photodetectors based on CsPbBr3 perovskite quantum dots (PQDs). The EDOT was found to effectively passivate defects on the PQDs surface and improve carrier transport, leading to a significant increase in photodetector performance by up to 178%.
Perovskite quantum dots (PQDs) require ligands on their surfaces to passivate defects and prevent aggregation. However, the ligands construct the interface relationship between the PQDs, which may seriously hinder the carrier transport. Hence, we propose a molecular engineering strategy of using 3,4-ethylenedioxythiophene (EDOT) to perfectly solve this problem, benefiting from its high conjugation and passivation ability to CsPbBr3 PQDs. Furthermore, EDOT on the surface of PQDs can be in-situ polymerized under the photocurrent of the photodetector, thus interconnecting the PQDs which enhanced the performance of the photodetectors up to 178% of its initial performance. We have thoroughly investigated the electropolymerization process of EDOT and its passivation effect on PQDs. The simple lateral photodetector based on EDOT PQDs exhibits a high responsivity of 11.96 A/W, which is 10(4) times higher than that of oleic acid caped PQDs. Due to the protection of poly(3,4-ethylenedioxythiophene) (PEDOT), the photodetector prepared from EDOT PQDs exhibited very high stability, retaining 94% of its performance after six months in air. This strategy provides a solution for the application of PQDs in high performances and stable optoelectronic devices.

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