Phonon transport in multiphase nanostructured silicon fabricated by high-pressure torsion

We present a combined experimental and numerical investigation of phonon transport in multiphase nanostructured silicon. The sample was synthesized by high-pressure torsion with a nominal pressure of 24GPa. Based on the x-ray diffraction measurement, we have identified the existence of three phases of silicon in the sample: Si-I, Si-III, and Si-XII, with volume fractions of 66%, 25%, and 9% and average grain sizes of 25, 14, and 11nm, respectively. The measured thermal conductivities of the sample in the temperature range of 150-330K are on the order of 5W/(mK) and exhibit weak temperature dependence. A multiscale modeling that incorporates first-principles lattice dynamics, the Monte Carlo ray-tracing method, and effective medium theory was used to understand the mechanism of phonon transport in multiphase nanostructured silicon as well as the weak temperature dependence. We found that the thermal conductivity of single-phase nanostructured silicon decreases with decreasing average grain size and is about an order of magnitude lower than the corresponding bulk counterpart when the average grain size is O ( 10 The weak temperature-dependent thermal conductivity in the nanostructured silicon is attributed to the strong elastic phonon-boundary scattering at the grain boundary. The thermal conductivity predicted from the multiscale modeling matches reasonably well with the measurement. This work provides insights into phonon transport in multiphase nanostructured materials and suggests that the effective thermal conductivity of nanostructured silicon from high-pressure torsion can be further reduced by increasing the volume fractions of the Si-III and Si-XII phases.

Automated summary

Experimental and numerical investigation of phonon transport in multiphase nanostructured silicon synthesized through high-pressure torsion was conducted. The study revealed a weak temperature dependence in thermal conductivity in the temperature range of 150-330K and showed good agreement between predicted thermal conductivity from multiscale modeling and experimental measurements. Additionally, increasing the volume fractions of Si-III and Si-XII phases was suggested to further reduce the effective thermal conductivity of nanostructured silicon from high-pressure torsion.