Annealed n-TiO2/In2O3 nanowire metal-insulator-semiconductor for highly photosensitive low-noise ultraviolet photodetector

标题
Annealed n-TiO2/In2O3 nanowire metal-insulator-semiconductor for highly photosensitive low-noise ultraviolet photodetector
作者
关键词
Annealing, In, 2, O, 3, TiO, 2, Nanowire, Ultraviolet photodetector
出版物
JOURNAL OF ALLOYS AND COMPOUNDS
Volume 854, Issue -, Pages 157229
出版商
Elsevier BV
发表日期
2020-09-15
DOI
10.1016/j.jallcom.2020.157229

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